Nexperia BZV49-C56.115 is a PNP (positive-negative-positive) silicon epitaxial planar junction transistor. It has a current gain of 390-1000, a hFE of 15~100, a DC current amplification factor of 5-15, and an operating temperature of -55°C to 150°C. Its collector-emitter breakdown voltage is 300V and its power dissipation is 625mW. Its maximum Vce is 300V, maximum Ic is 600mA, maximum Vebo is 6V, and maximum Pc is 3W. The transistor is ideal for switching, amplifier, and general purpose applications. It can be used in power supplies, audio stages, radios, and other peripheral parts of electronic circuits.