X-On Electronics has gained recognition as a prominent supplier of PBSS4240DPN Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4240DPN Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4240DPN Nexperia

PBSS4240DPN electronic component of Nexperia

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See Product Specifications

Part No.	PBSS4240DPN
Manufacturer:	Nexperia
Category:	Bipolar Transistors - BJT
Description:	TRANSISTOR, SOT-457 Low on-state resistance power MOSFET switch for high current applications.
Datasheet:
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

100: USD 0.2268 ea
Line Total: USD 22.68

Availability - 0

MOQ: 100 Multiples: 1
Pack Size: 1

PBSS4240DPN More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 29 Nov to Thu. 05 Dec MOQ : 100 Multiples : 1	100 : USD 0.2268 500 : USD 0.1625 1500 : USD 0.1591

Specifications

Manufacturer Nexperia Nexperia
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Transistor Polarity NPN, PNP NPN, PNP
Brand Nexperia Nexperia
Collector Emitter Voltage Vbrceo 40 V 40 V
Power Dissipation Pd 310 mW 310 mW
Dc Collector Current 1.35 A 1.35 A
Dc Current Gain Hfe 300hFE 300hFE
Transistor Case Style SOT-457 SOT-457
No. Of Pins 6Pins 6Pins
Operating Temperature Max 150 C 150 C
Msl MSL 1 - Unlimited MSL 1 - Unlimited
Svhc No SVHC (27-Jun-2018) No SVHC (27-Jun-2018)
Collector Emitter Saturation Voltage Vceon 100 V 100 V
Continuous Collector Current Ic Max 1.35 A 1.35 A
Current Ic @ Vce Sat 100 mA 100 mA
Current Ic Continuous A Max 1.35 A 1.35 A
Current Ic Hfe 1 mA 1 mA
Full Power Rating Temperature 25C 25C
Gain Bandwidth Ft Typ 150Mhz 150Mhz
Hfe Min 300 300
Module Configuration Dual Dual
Operating Temperature Min - 65 C - 65 C
Operating Temperature Range - 65 C to +150 C - 65 C to +150 C
Power Dissipation Ptot Max 750 mW 750 mW
Power Dissipation Per Device Max 750 mW 750 mW
Smd Marking M3 M3
Voltage Vcbo 40 V 40 V

We are delighted to provide the PBSS4240DPN from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4240DPN and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

The PBSS4240DPN is a N-Channel PowerTrench™ MOSFET from Nexperia. It is designed to operate in the 30V to 60V range and features an RDS(on) of 150mO at 8A and 175mO at 10 A. The device has an integrated charge-balance control to reduce body diode conduction and improve reverse recovery time. It is able to withstand up to 100V drain-source voltage and 15A drain-source current. The package is a small 4mm x 4mm DPAK.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

NEXPERIA USA INC
Nexperia USA Inc.

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