PBSS4330PA Nexperia

PBSS4330PA 30 V, 3 A NPN low VCEsat (BISS) transistor 7 April 2015 Product data sheet 1. General description NPN low V Breakthrough In Small Signal (BISS) transistor, encapsulated in an CEsat ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS5330PA. 2. Features and benefits Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability 3. Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 30 V CEO voltage I collector current - - 3 A C I peak collector current single pulse t 1 ms - - 5 A CM p R collector-emitter I = 3 A I = 300 mA pulsed - 75 100 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb Scan or click this QR code to view the latest information for this product HUSON3NXP Semiconductors PBSS4330PA 30 V, 3 A NPN low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 3 3 2 E emitter 1 3 C collector 2 sym021 1 2 Transparent top view DFN2020-3 (SOT1061) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4330PA DFN2020-3 DFN2020-3: plastic thermal enhanced ultra thin small outline SOT1061 package no leads 3 terminals body 2 x 2 x 0.65 mm 7. Marking Table 4. Marking codes Type number Marking code PBSS4330PA AH PBSS4330PA All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 7 April 2015 2 / 16