X-On Electronics has gained recognition as a prominent supplier of PBSS4360PAS Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4360PAS Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4360PAS Nexperia

Name: PBSS4360PAS
Brand: Nexperia
SKU: PBSS4360PAS_Nexperia
Availability: OutOfStock
Rating: 5 (11 reviews)

PBSS4360PAS electronic component of Nexperia

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See Product Specifications

Part No.	PBSS4360PAS
Manufacturer:	Nexperia
Category:	Bipolar Transistors - BJT
Description:	TRANSISTOR, AEC-Q101, BIPOL, NPN, 60V
Datasheet:	PBSS4360PAS Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.5814 ea
Line Total: USD 2.91

Availability - 0

MOQ: 5 Multiples: 1
Pack Size: 1

PBSS4360PAS More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 22 Nov to Thu. 28 Nov MOQ : 5 Multiples : 1	5 : USD 0.5814 10 : USD 0.4816 100 : USD 0.3362 500 : USD 0.2614 1000 : USD 0.2124

Specifications

Manufacturer Nexperia Nexperia
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Transistor Polarity NPN NPN
Brand Nexperia Nexperia
Collector Emitter Voltage Vbrceo 60 V 60 V
Transition Frequency Ft 160Mhz 160Mhz
Power Dissipation Pd 600 mW 600 mW
Dc Collector Current 3 A 3 A
Dc Current Gain Hfe 75hFE 75hFE
Transistor Case Style SOT-1061 SOT-1061
No. Of Pins 3Pins 3Pins
Operating Temperature Max 175 C 175 C
Automotive Qualification Standard AEC-Q101 AEC-Q101
Msl MSL 1 - Unlimited MSL 1 - Unlimited
Svhc No SVHC (15-Jan-2018) No SVHC (15-Jan-2018)

We are delighted to provide the PBSS4360PAS from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4360PAS and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

PBSS4360PAS 60 V, 3 A NPN low VCEsat (BISS) transistor 16 October 2015 Product data sheet 1. General description NPN low V Breakthrough in a Small Signal (BISS) transistor, encapsulated in an CEsat ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. PNP complement: PBSS5360PAS 2. Features and benefits Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C High efficiency due to less heat generation High temperature applications up to 175 C Reduced Printed-Circuit Board (PCB) area requirements Leadless small SMD plastic package with soldarable side pads Exposed heat sink for excellent thermal and electrical conductivity Suitable for Automatic Optical Inspection (AOI) of solder joint AEC-Q101 qualified 3. Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 60 V CEO voltage I collector current - - 3 A C I peak collector current single pulse t 1 ms - - 6 A CM p R collector-emitter I = 3 A I = 300 mA pulsed - 73 108 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb Scan or click this QR code to view the latest information for this product DFN2020D-3NXP Semiconductors PBSS4360PAS 60 V, 3 A NPN low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 3 3 2 E emitter 1 3 C collector 2 sym021 1 2 Transparent top view DFN2020D-3 (SOT1061D) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4360PAS DFN2020D-3 DFN2020D-3: plastic thermal enhanced ultra thin small SOT1061D outline package no leads 3 terminals body 2 x 2 x 0.65 mm 7. Marking Table 4. Marking codes Type number Marking code PBSS4360PAS E9 PBSS4360PAS All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 16 October 2015 2 / 18

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

NEXPERIA USA INC
Nexperia USA Inc.

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