Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBSS5160U 60 V, 1 A PNP low V (BISS) transistor CEsat Rev. 04 2 October 2008 Product data sheet 1. Product prole 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor in a very small CEsat SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160U. 1.2 Features n Low collector-emitter saturation voltage V CEsat n High collector current capability I and I C CM n High collector current gain (h ) at high I FE C n High efciency due to less heat generation n Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications n High voltage DC-to-DC conversion n High voltage MOSFET gate driving n High voltage motor control n High voltage power switches (e.g. motors, fans) n Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - - 60 V CEO 1 I collector current -- -1A C I peak collector current single pulse -- -2A CM t 1ms p 2 R collector-emitter saturation I = - 1A - 255 340 m CEsat C resistance I = - 100 mA B 1 Device mounted on a ceramic PCB, Al O , standard footprint. 2 3 2 Pulse test: t 300 s 0.02. p