X-On Electronics has gained recognition as a prominent supplier of PBSS9410PA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS9410PA Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS9410PA Nexperia

PBSS9410PA electronic component of Nexperia
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Part No.PBSS9410PA
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: TRANSISTOR,PNP,100V,2.7A,SOT1061
Datasheet: PBSS9410PA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 0.3355 ea
Line Total: USD 33.55 
Availability - 0
MOQ: 100  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 100
Multiples : 1
100 : USD 0.3355
500 : USD 0.2532
1000 : USD 0.199
5000 : USD 0.1729

   
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Gain Bandwidth Ft Typ
Operating Temperature Min
Operating Temperature Range
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We are delighted to provide the PBSS9410PA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS9410PA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS9410PA 100 V, 2.7 A PNP low V (BISS) transistor CEsat Rev. 01 11 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra CEsat thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS8510PA. 1.2 Features and benefits Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability 1.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 100 V CEO I collector current - - 2.7 A C I peak collector current single pulse -- 4A CM t 1ms p 1 R collector-emitter I = 2.7 A - 110 166 m CEsat C saturation resistance I = 135 mA B 1 Pulse test: t 300 s 0.02. pPBSS9410PA NXP Semiconductors 100 V, 2.7 A PNP low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1base 3 3 2emitter 3 collector 1 2 sym013 12 Transparent top view 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS9410PA HUSON3 plastic thermal enhanced ultra thin small outline package SOT1061 no leads three terminals body 2 2 0.65 mm 4. Marking Table 4. Marking codes Type number Marking code PBSS9410PA AG 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 100 V CBO V collector-emitter voltage open base - 100 V CEO V emitter-base voltage open collector - 7V EBO I collector current - 2.7 A C I peak collector current single pulse - 4A CM t 1ms p I base current - 600 mA B 1 P total power dissipation T 25 C -500 mW tot amb 2 -1 W 3 -1.4 W 4 -2.1 W PBSS9410PA All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 11 May 2010 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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