PDTA115ET Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET PDTA115E series PNP resistor-equipped transistors R1 = 100 k, R2 = 100 k Product data sheet 2004 Jul 30 Supersedes data of 2004 May 05NXP Semiconductors Product data sheet PNP resistor-equipped transistors PDTA115E series R1 = 100 k, R2 = 100 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT Simplified circuit design V collector-emitter 50 V CEO Reduction of component count voltage I output current (DC) 20 mA Reduced pick and place costs. O R1 bias resistor 100 k R2 bias resistor 100 k APPLICATIONS General purpose switching and amplification DESCRIPTION Inverter and interface circuits PNP resistor-equipped transistor (see Simplified outline, Circuit driver. symbol and pinning for package details). PRODUCT OVERVIEW PACKAGE TYPE NUMBER MARKING CODE NPN COMPLEMENT PHILIPS EIAJ PDTA115EE SOT416 SC-75 5E PDTC115EE PDTA115EEF SOT490 SC-89 6B PDTC115EEF PDTA115EK SOT346 SC-59 62 PDTC115EK PDTA115EM SOT883 SC-101 F6 PDTC115EM PDTA115ES SOT54 (TO-92) SC-43 TA115E PDTC115ES (1) PDTA115ET SOT23 *AB PDTC115ET (1) PDTA115EU SOT323 SC-70 *7C PDTC115EU Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. 2004 Jul 30 2