PDTD123YT Nexperia

PDTD123Y series NPN 500 mA, 50 V resistor-equipped transistors R1 = 2.2 k , R2 = 10 k Rev. 02 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTD123YK SOT346 SC-59A TO-236 PDTB123YK 1 PDTD123YS SOT54 SC-43A TO-92 PDTB123YS PDTD123YT SOT23 - TO-236AB PDTB123YT 1 Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features Built-in bias resistors Reduces component count Simplifies circuit design Reduces pick and place costs 500 mA output current capability 10 % resistor ratio tolerance 1.3 Applications Digital application in automotive and Cost saving alternative for BC817 series industrial segment in digital applications Controlling IC inputs Switching loads 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 50 V CEO I output current (DC) - - 500 mA O R1 bias resistor 1 (input) 1.54 2.2 2.86 k R2/R1 bias resistor ratio 4.1 4.55 5NXP Semiconductors PDTD123Y series NPN 500 mA resistor-equipped transistors R1 = 2.2 k , R2 = 10 k 2. Pinning information Table 3. Pinning Pin Description Simplified outline Symbol SOT54 1 input (base) 2 2 output (collector) R1 3 GND (emitter) 1 1 2 R2 3 001aab347 3 006aaa145 SOT54A 1 input (base) 2 2 output (collector) R1 3 GND (emitter) 1 1 2 R2 3 001aab348 3 006aaa145 SOT54 variant 1 input (base) 2 2 output (collector) R1 3 GND (emitter) 1 1 2 R2 3 001aab447 3 006aaa145 SOT23, SOT346 1 input (base) 3 3 2 GND (emitter) R1 3 output (collector) 1 R2 12 2 006aaa144 sym007 PDTD123Y SER 2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 16 November 2009 2 of 10