PESD12VV1BL Nexperia

PESD12VV1BL Very low capacitance bidirectional ESD protection diode Rev. 2 18 March 2013 Product data sheet 1. Product profile 1.1 General description Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits Bidirectional ESD protection of one line ESD protection up to 30 kV Low diode capacitance C =17pF IEC 61000-4-2 level 4 (ESD) d Rated peak pulse power: P = 290 W IEC 61000-4-5 (surge) I =7.8 A PPM PPM Ultra low leakage current I < 1 nA AEC-Q101 qualified RM 1.3 Applications Computers and peripherals Portable electronics Audio and video equipment Communication systems Cellular handsets and accessories 1.4 Quick reference data Table 1. Quick reference data T =25 C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit V reverse standoff voltage - - 12 V RWM C diode capacitance f = 1 MHz V = 0 V - 17 25 pF d R 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 cathode 2 cathode 1 2 1 2 sym045 Transparent top viewPESD12VV1BL NXP Semiconductors Very low capacitance bidirectional ESD protection diode 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD12VV1BL DFN1006-2 leadless ultra small plastic package 2 terminals SOD882 body 1.0 0.6 0.5 mm 4. Marking Table 4. Marking codes Type number Marking code PESD12VV1BL MW 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit 1 P rated peak pulse power -290 W PPM 1 I rated peak pulse current t =8/20 s -7.8 A PPM p T junction temperature - 150 C j T ambient temperature 55 +150 C amb T storage temperature 65 +150 C stg 1 Device stressed with ten non-repetitive current pulses (8/20 s exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321). Table 6. ESD maximum ratings T =25 C unless otherwise specified. amb Symbol Parameter Conditions Min Max Unit 1 V electrostatic IEC 61000-4-2 -30 kV ESD discharge voltage (contact discharge) machine model - 400 V MIL-STD-883 -10 kV (human body model) 1 Device stressed with ten non-repetitive ESD pulses. Table 7. ESD standards compliance Standard Conditions IEC 61000-4-2 level 4 (ESD) > 15 kV (air) > 8 kV (contact) MIL-STD-883 class 3B (human body model) > 8 kV PESD12VV1BL All information provided in this document is subject to legal disclaimers. NXP B.V. 2013. All rights reserved. Product data sheet Rev. 2 18 March 2013 2 of 12