PESD18VF1BLYL Nexperia

PESD18VF1BL Ultra low capacitance bidirectional ESD protection diode 10 July 2018 Product data sheet 1. General description Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a DFN1006-2 (SOD882) leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. 2. Features and benefits Ultra low diode capacitance C = 0.35 pF d High reverse standoff voltage V = 18 V RWM Very small voltage dependency of the capacitance ESD protection up to 10 kV according to IEC 61000-4-2, level 4 AEC-Q101 qualified 3. Applications NFC antenna protection Protection of high-speed data lines 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse standoff T = 25 C - - 18 V RWM amb voltage C diode capacitance f = 1 MHz V = 0 V T = 25 C 0.28 0.35 0.5 pF d R amb 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K1 cathode (diode 1) K1 K2 1 2 2 K2 cathode (diode 2) sym045 Transparent top view DFN1006-2 (SOD882)Nexperia PESD18VF1BL Ultra low capacitance bidirectional ESD protection diode 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD18VF1BL DFN1006-2 DFN1006-2: leadless ultra small plastic package 2 terminals SOD882 7. Marking Table 4. Marking codes Type number Marking code PESD18VF1BL WM 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit I rated peak pulse current t = 8/20 s IEC 61000-4-5 IEC 1 - 1 A PPM p 61643-321 T junction temperature - 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg ESD maximum ratings V electrostatic discharge IEC 61000-4-2 contact discharge 1 2 - 10 kV ESD voltage IEC 61000-4-2 air discharge 1 2 - 15 kV MIL-STD-883 human body model HBM 1 - 10 kV machine model MM 1 - 400 V 1 Measured from pin 1 to pin 2. 2 Device stressed with ten non-repetitive ESD pulses. PESD18VF1BL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 10 July 2018 2 / 11