PESD5V0F1BLD Nexperia

PESD5V0F1BLD Femtofarad bidirectional ESD protection diode Rev. 1 23 July 2012 Product data sheet 1. Product profile 1.1 General description Femtofarad bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is encapsulated in a leadless ultra small DFN1006D-2 (SOD882D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. The combination of extremely low capacitance, high ESD maximum rating and ultra small package makes the device ideal for high-speed data line protection and antenna protection applications. 1.2 Features and benefits Bidirectional ESD protection of one line ESD protection up to 10 kV Femtofarad capacitance: C = 400 fF IEC 61000-4-2 level 4 (ESD) d Low ESD clamping voltage: 30 V Package height typ. 0.37 mm at 30 ns and 8kV Very low leakage current: I <1nA AEC-Q101 qualified RM 1.3 Applications 10/100/1000 Mbit/s Ethernet Portable electronics FireWire Communication systems High-speed data lines Computers and peripherals SIM card protection Audio and video equipment Cellular handsets and accessories Antenna protection 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per device V reverse standoff voltage - - 5.5 V RWM C diode capacitance f = 1 MHz V =0V - 0.4 0.55 pF d R DFN1006D-2PESD5V0F1BLD NXP Semiconductors Femtofarad bidirectional ESD protection diode 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 cathode (diode 1) 2 cathode (diode 2) 1 2 1 2 sym045 Transparent top view 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD5V0F1BLD DFN1006D-2 leadless ultra small plastic package 2 terminals SOD882D body 1 0.6 0.4 mm 4. Marking Table 4. Marking codes Type number Marking code PESD5V0F1BLD H 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per device 1 I rated peak pulse current t =8/20 s -2.5 A PPM p T junction temperature - 125 C j T ambient temperature 40 +125 C amb T storage temperature 55 +125 C stg 1 Device stressed with ten non-repetitive current pulses (8/20 s exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321). PESD5V0F1BLD All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 23 July 2012 2 of 11