PESD5V0H1BSNYL Nexperia

PESD5V0H1BSN Extremely low capacitance bidirectional ESD protection diode 30 April 2020 Product data sheet 1. General description Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the TrEOS protection family. This device is housed in a DSN0402B-2 (SOD992B) leadless ultra small Surface-Mounted Device (SMD) package designed to protect one signal line from the damage caused by ESD and other transients. 2. Features and benefits Bidirectional ESD protection of one line Extremely low diode capacitance C = 0.17 pF d Extremely low insertion loss : -0.45 dB at 10 GHz IL Extremely low return loss : -18.5 dB at 10 GHz RL Extremely low clamping voltage to protect sensitive I/Os Extremely low inductance protection path to ground Ultra small SMD package 3. Applications Cellular handsets and accessories Portable electronics Communication systems Computers and peripherals Thunderbolt 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse standoff -5 - 5 V RWM voltage C diode capacitance f = 1 MHz V = 0 V T = 25 C - 0.17 0.2 pF d R amb 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K1 cathode K1 K2 1 2 2 K2 cathode sym045 Transparent top view DSN0402B-2 (SOD992B)Nexperia PESD5V0H1BSN Extremely low capacitance bidirectional ESD protection diode 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD5V0H1BSN DSN0402B-2 silicon, leadless tiny package 2 terminals 0.28 mm pitch 0.43 SOD992B mm x 0.23 mm x 0.12 mm body 7. Marking Table 4. Marking codes Type number Marking code PESD5V0H1BSN 0 00 0001 VENDOR AND ORIENTATION PRODUCT CODE INDENTIFIER (1 bit) (2/6 bits) 1 2 READING EXAMPLE Bottom view PRODUCT CODE 0 01 0001 (4/6 bits) aaa-014819 Fig. 1. DSN0402B-2 (SOD992B) binary marking code description 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134) Symbol Parameter Conditions Min Max Unit V reverse standoff voltage -5 5 V RWM I rated peak pulse current t = 8/20 s 1 -7 7 A PPM p T ambient temperature -40 125 C amb T storage temperature -65 150 C stg ESD maximum ratings V electrostatic discharge IEC 61000-4-2 contact discharge 2 -15 15 kV ESD voltage IEC 61000-4-2 air discharge 2 -15 15 kV 1 Non-repetitive current pulse 8/20 s exponentially decaying waveform according to IEC61000-4-5. 2 Device stressed with ten non-repetitive ESD pulses. PESD5V0H1BSN All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 30 April 2020 2 / 14