PESD5V0U2BT Nexperia

PESD5V0U2BT Ultra low capacitance bidirectional double ESD protection diode Rev. 01 27 March 2007 Product data sheet 1. Product prole 1.1 General description Ultra low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package designed to protect two data lines from the damage caused by ESD. 1.2 Features n Bidirectional ESD protection of two lines n Ultra low leakage current: I =5nA RM n Ultra low diode capacitance: C = 2.9 pF n ESD protection of up to 10 kV d n IEC 61000-4-2 level 4 (ESD) 1.3 Applications n Computers and peripherals n Communication systems n Audio and video equipment n Portable electronics n Cellular handsets and accessories n Subscriber Identity Module (SIM) card protection n 10/100/1000 Ethernet n FireWire n Local Area Network (LAN) equipment n High-speed data lines 1.4 Quick reference data Table 1. Quick reference data T =25 C unless otherwise specied. amb Symbol Parameter Conditions Min Typ Max Unit Per diode V reverse standoff voltage - - 5 V RWM C diode capacitance f = 1 MHz V = 0 V - 2.9 3.5 pF d RPESD5V0U2BT NXP Semiconductors Ultra low capacitance bidirectional double ESD protection diode 2. Pinning information Table 2. Pinning Pin Description Simplied outline Symbol 1 cathode 1 3 1 2 cathode 2 3 common cathode 12 3 2 006aaa155 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD5V0U2BT - plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code PESD5V0U2BT 1U* 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PESD5V0U2BT 1 NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 27 March 2007 2 of 11