PESD5V0X1UAB Nexperia

PESD5V0X1UAB Ultra low capacitance unidirectional ESD protection diode Rev. 1 15 February 2011 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode in a SOD523 (SC-79) ultra small and flat lead Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. The combination of extremely low capacitance and ultra low clamping voltage makes the device ideal for high-speed data line protection applications. 1.2 Features and benefits ESD protection of one line ESD protection up to 15 kV Ultra low diode capacitance IEC 61000-4-2 level 4 (ESD) C =1.55pF d Ultra low clamping voltage: V =9V IEC 61000-4-5 (surge) I =2A CL PP Ultra low leakage current: I =1nA AEC-Q101 qualified RM 1.3 Applications Computers and peripherals Portable electronics Audio and video equipment Subscriber Identity Module (SIM) card protection Cellular handsets and accessories USB, High-Definition Multimedia Interface (HDMI), FireWire 10/100/1000 Mbit/s Ethernet High-speed data lines Communication systems 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse standoff voltage - - 5.5 V RWM C diode capacitance f = 1 MHz V = 0 V - 1.55 1.75 pF d R SOD523PESD5V0X1UAB NXP Semiconductors Ultra low capacitance unidirectional ESD protection diode 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 1 cathode 2 anode 2 1 1 2 006aaa152 1 The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD5V0X1UAB SC-79 plastic surface-mounted package 2 leads SOD523 4. Marking Table 4. Marking codes Type number Marking code PESD5V0X1UAB Y2 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit 1 2 I peak pulse current t =8/20 s -2 A PP p T junction temperature - 150 C j T ambient temperature 55 +150 C amb T storage temperature 65 +150 C stg 1 Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. 2 Measured from pin 1 to 2. PESD5V0X1UAB All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 15 February 2011 2 of 11