PMBT2369 Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET PMBT2369 NPN switching transistor Product data sheet 2004 Jan 22 Supersedes data of 1999 Apr 27NXP Semiconductors Product data sheet NPN switching transistor PMBT2369 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION Low voltage (max. 15 V). 1 base 2 emitter APPLICATIONS 3 collector High-speed switching, especially in portable equipment. DESCRIPTION handbook, halfpage 3 NPN switching transistor in a SOT23 plastic package. 3 MARKING 1 (1) TYPE NUMBER MARKING CODE 2 1 2 PMBT2369 *1J Top view MAM255 Note 1. * = p : Made in Hong Kong. Fig.1 Simplified outline (SOT23) and symbol. * = t : Made in Malaysia. * = W : Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PMBT2369 plastic surface mounted package 3 leads SOT23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 40 V CBO V collector-emitter voltage open base 15 V CEO V emitter-base voltage open collector 5 V EBO I collector current (DC) 200 mA C I peak collector current 300 mA CM I peak base current 100 mA BM P total power dissipation T 25 C note 1 250 mW tot amb T storage temperature 65 +150 C stg T junction temperature 150 C j T operating ambient temperature 65 +150 C amb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004 Jan 22 2