PMEG050T150EIPD 50 V, 15 A low VF Trench MEGA Schottky barrier rectifier 27 November 2019 Product data sheet 1. General description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP15 (SOT1289) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Average forward current: I 15 A F(AV) Reverse voltage: V 50 V R Low forward voltage Low leakage current due to Trench MEGA Schottky technology High power capability due to clip-bonding technology and heat sink Small and thin SMD plastic package, typical height 0.78 mm AEC-Q101 qualified 3. Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Freewheeling application Reverse polarity protection Low power consumption application 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse voltage T = 25 C - - 50 V R j V forward voltage I = 15 A T = 25 C pulsed 1 - 510 570 mV F F j I reverse current V = 10 V T = 25 C pulsed 1 - 14 51 A R R j V = 50 V T = 25 C pulsed 1 - 35 200 A R j 1 Very short pulse, in order to maintain a stable junction temperature.Nexperia PMEG050T150EIPD 50 V, 15 A low VF Trench MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A anode A 1 K A 2 A anode 3 aaa-009063 3 K cathode 2 CFP15 (SOT1289) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG050T150EIPD CFP15 plastic, thermal enhanced ultra thin SMD package 3 terminals SOT1289 5.8 x 4.3 x 0.78 mm body 7. Marking Table 4. Marking codes Type number Marking code PMEG050T150EIPD 050T M15E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage T = 25 C - 50 V R j I forward current = 1 T 118 C - 21 A F sp I non-repetitive peak t = 8 ms square wave T = 25 C - 130 A FSM p j(init) forward current P total power dissipation T 25 C 1 - 1.66 W tot amb 2 - 2.15 W T junction temperature - 175 C j T ambient temperature -55 175 C amb T storage temperature -65 175 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . PMEG050T150EIPD All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 27 November 2019 2 / 11