PMEG100T080ELPEZ Nexperia

PMEG100T080ELPE 100 V, 8 A low leakage current Trench MEGA Schottky barrier rectifier 8 October 2021 Product data sheet 1. General description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Low forward voltage Low Q and low I rr RM Low leakage current High power capability due to clip-bonding technology Small and flat lead SMD power plastic package AEC-Q101 qualified 3. Applications High efficiency DC-to-DC conversion Automotive LED lighting Switch mode power supply Freewheeling application Reverse polarity protection OR-ing 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I average forward = 0.5 f = 20 kHz square wave T - - 8 A F(AV) sp current 162 C V reverse voltage T = 25 C - - 100 V R j V forward voltage I = 8 A pulsed T = 25 C 1 - 730 810 mV F F j I reverse current V = 100 V pulsed T = 25 C 1 - 0.8 4 A R R j V = 100 V pulsed T = 125 C 1 - 1.1 6 mA R j 1 Very short pulse, in order to maintain a stable junction temperature.Nexperia PMEG100T080ELPE 100 V, 8 A low leakage current Trench MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A anode 1 2 A anode A 3 K A 3 K cathode 2 aaa-009063 CFP15B (SOT1289B) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG100T080ELPE CFP15B plastic, thermal enhanced ultra thin SMD package 3 leads SOT1289B 2.13 mm pitch 5.8 x 4.3 x 0.95 mm body 7. Marking Table 4. Marking codes Type number Marking code 100T PMEG100T080ELPE L08E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC60134). Symbol Parameter Conditions Min Max Unit V reverse voltage T = 25 C - 100 V R j I forward current = 1 T 158 C - 11.3 A F sp I average forward current = 0.5 f = 20 kHz square wave T - 8 A F(AV) sp 162 C I non-repetitive peak t = 8.3 ms half sine wave T = 25 C - 170 A FSM p j(init) forward current P total power dissipation T 25 C 1 - 1.66 W tot amb 2 - 2.15 W T junction temperature - 175 C j T ambient temperature -55 175 C amb T storage temperature -65 175 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . PMEG100T080ELPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 8 October 2021 2 / 13