PMEG100T10ELR 100 V, 1 A low leakage current Trench MEGA Schottky barrier rectifier 12 July 2021 Product data sheet 1. General description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP3 (SOD123W) small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Low forward voltage Low Q and low I rr RM Low leakage current High power capability due to clip-bonding technology Small and flat lead SMD power plastic package 3. Applications High efficiency DC-to-DC conversion LED lighting Switch mode power supply Freewheeling applications Reverse polarity protection OR-ing 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I average forward = 0.5 f = 20 kHz square wave T - - 1 A F(AV) sp current 166 C V reverse voltage T = 25 C - - 100 V R j V forward voltage I = 1 A pulsed T = 25 C 1 - 670 750 mV F F j I reverse current V = 100 V pulsed T = 25 C 1 - 0.1 0.9 A R R j V = 100 V pulsed T = 125 C 1 - 0.18 1 mA R j 1 Very short pulse, in order to maintain a stable junction temperature.Nexperia PMEG100T10ELR 100 V, 1 A low leakage current Trench MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 1 K A 1 2 2 A anode sym001 CFP3 (SOD123W) 1 The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG100T10ELR CFP3 plastic, surface mounted package 2 terminals 2.6 mm x SOD123W 1.7 mm x 1 mm body 7. Marking Table 4. Marking codes Type number Marking code LA PMEG100T10ELR 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage T = 25 C - 100 V R j I forward current = 1 T 163 C - 1.4 A F sp I average forward current = 0.5 f = 20 kHz square wave T - 1 A F(AV) sp 166 C I non-repetitive peak t = 8.3 ms half sine wave T = 25 C - 40 A FSM p j(init) forward current P total power dissipation T 25 C 1 - 0.68 W tot amb 2 - 1.15 W T junction temperature - 175 C j T ambient temperature -55 175 C amb T storage temperature -65 175 C stg 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . PMEG100T10ELR All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 12 July 2021 2 / 14