PMEG120G30ELP 120 V, 3 A Silicon Germanium (SiGe) rectifier 26 May 2020 Product data sheet 1. General description Silicon Germanium (SiGe) rectifier encapsulated in a CFP5 (SOD128) small and flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits Features Benefits Low forward voltage and low Q Excellent efficiency rr Extremely low leakage current Extraordinary safe operating area Thermal stability up to 175 C junction temperature Minimal impact on Electro-Magnetic Compatibility (EMC) allowing simplified certification Fast and smooth switching Low parasitic capacitance AEC-Q101 qualified 3. Applications High-efficiency power conversion Automotive LED lighting Engine control unit Server power supply Base station power supply Reverse polarity protection OR-ing 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I average forward = 0.5 square wave f = 20 kHz T - - 3 A F(AV) sp current 162 C V reverse voltage T = 25 C - - 120 V R j V forward voltage I = 3 A T = 25 C pulsed 1 - 770 840 mV F F j I reverse current V = 120 V T = 25 C pulsed 1 - 0.5 30 nA R R j V = 120 V T = 150 C pulsed 1 - 30 300 A R j 1 Very short pulse, in order to maintain a stable junction temperature.Nexperia PMEG120G30ELP 120 V, 3 A Silicon Germanium (SiGe) rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode A K 1 2 2 A anode 006aab040 CFP5 (SOD128) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG120G30ELP CFP5 plastic, surface mounted package 2 terminals 4 mm pitch 3.8 SOD128 mm x 2.6 mm x 1 mm body 7. Marking Table 4. Marking codes Type number Marking code PMEG120G30ELP E9 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Attention: Stress above one of these maximum values may cause irreversible damage to the device. Symbol Parameter Conditions Min Max Unit V reverse voltage T = 25 C - 120 V R j I forward current = 1 T 158 C - 4.2 A F sp I average forward current = 0.5 square wave f = 20 kHz T - 3 A F(AV) sp 162 C I non-repetitive peak t = 8.3 ms half sine wave T = 25 C - 85 A FSM p j(init) forward current P total power dissipation T 25 C 1 - 0.75 W tot amb 2 - 1.2 W T junction temperature - 175 C j T ambient temperature -55 175 C amb T storage temperature -65 175 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . PMEG120G30ELP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 26 May 2020 2 / 14