PMEG2015EA Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET PMEG2015EA Low V (MEGA) Schottky barrier F diode Product data sheet 2004 Feb 03 Supersedes data of 2003 May 20NXP Semiconductors Product data sheet Low V (MEGA) Schottky barrier diode PMEG2015EA F FEATURES PINNING Forward current: 1.5 A PIN DESCRIPTION Reverse voltage: 20 V 1 cathode Ultra high-speed switching 2 anode Very low forward voltage Very small plastic SMD package. APPLICATIONS 1 2 12 Ultra high-speed switching sym001 Voltage clamping Protection circuits. Marking code: S5. DESCRIPTION The marking bar indicates the cathode. Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for Fig.1 Simplified outline (SOD323 SC-76) and stress protection, encapsulated in a SOD323 (SC-76) very symbol. small SMD plastic package. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PMEG2015EA plastic surface mounted package 2 leads SOD323 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V continuous reverse voltage 20 V R I continuous forward current T < 55 C 1.5 A F s I non-repetitive peak forward current t = 8 ms square wave 10 A FSM p I repetitive peak forward current t = 1 ms = 0.25 4.5 A FRM p T storage temperature 65 +150 C stg T junction temperature 125 C j T operating ambient temperature 65 +125 C amb 2004 Feb 03 2