PMEG3010BEA Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET PMEGXX10BEA PMEGXX10BEV 1 A very low V MEGA Schottky F barrier rectifier Product data sheet 2004 Jun 14 Supersedes data of 2004 Apr 02 NXP Semiconductors Product data sheet 1 A very low V MEGA Schottky PMEGXX10BEA F barrier rectifier PMEGXX10BEV FEATURES QUICK REFERENCE DATA Forward current: 1 A SYMBOL PARAMETER MAX. UNIT Reverse voltages: 20 V, 30 V, 40 V I forward current 1 A F Very low forward voltage V reverse voltage 20 30 40 V R Ultra small and very small plastic SMD package Power dissipation comparable to SOT23. PINNING PIN DESCRIPTION APPLICATIONS PMEGXX10BEA (see Fig.1) High efficiency DC-to-DC conversion 1 cathode Voltage clamping 2 anode Protection circuits PMEGXX10BEV (see Fig.2) Low voltage rectification 1, 2, 5, 6 cathode Blocking diodes 3, 4 anode Low power consumption applications. DESCRIPTION Planar Maximum Efficiency General Application (MEGA) 1 2 Schottky barrier rectifier with an integrated guard ring for 12 stress protection, encapsulated in a very small SOD323 (SC-76) and ultra small SOT666 SMD plastic package. sym001 MARKING The marking bar indicates the cathode. TYPE NUMBER MARKING CODE PMEG2010BEA V1 Fig.1 Simplified outline (SOD323 SC-76) and symbol. PMEG3010BEA V2 PMEG4010BEA V3 PMEG2010BEV G6 PMEG3010BEV G5 PMEG4010BEV G4 6 5 4 1,2 3, 4 5,6 sym038 12 3 Fig.2 Simplified outline (SOT666) and symbol. 2004 Jun 14 2