PMEG4002EB,115 Nexperia

PMEG4002EB 200 mA very low VF MEGA Schottky barrier rectifier 28 June 2016 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small and flat lead Surface Mounted Device (SMD) plastic package. 2. Features and benefits Forward current: 200 mA Reverse voltage: 40 V Very low forward voltage Ultra small and flat lead SMD plastic package AEC-Q101 qualified 3. Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Inverse polarity protection Low power consumption applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I forward current - - 200 mA F V reverse voltage - - 40 V R V forward voltage I = 200 mA T = 25 C - 520 600 mV F F amb 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 1 1 2 2 A anode 1 2 sym001 SOD523 1 The marking bar indicates the cathode.Nexperia PMEG4002EB 200 mA very low VF MEGA Schottky barrier rectifier 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG4002EB SOD523 plastic surface-mounted package 2 leads SOD523 7. Marking Table 4. Marking codes Type number Marking code PMEG4002EB L9 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage - 40 V R I forward current - 200 mA F I repetitive peak forward t 1 s 0.5 - 300 mA FRM p current I non-repetitive peak half sine wave t = 8.3 ms - 1 A FSM p forward current T junction temperature - 150 C j T ambient temperature -65 150 C amb T storage temperature -65 150 C stg 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance in free air 1 2 - - 450 K/W th(j-a) from junction to ambient R thermal resistance - - - th(j-sp) from junction to solder point 1 For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses P are a R significant part of the total power losses. 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PMEG4002EB All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 28 June 2016 2 / 9