PMEG4010AESBYL Nexperia

PMEG4010AESB 40 V, 1 A low VF MEGA Schottky barrier rectifier 6 October 2015 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993) Surface-Mounted Device (SMD) package. 2. Features and benefits Average forward current: I 1 A F(AV) Reverse voltage: V 40 V R Low forward voltage, typical: V = 435 mV F Low reverse current, typical: I = 325 A R Package height typ. 270 m 3. Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Low power consumption applications Ultra high-speed switching LED backlight for mobile application 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I average forward = 0.5 f = 20 kHz T 145 C - - 1 A F(AV) sp current square wave V reverse voltage T = 25 C - - 40 V R j V forward voltage I = 1 A t 300 s 0.02 - 435 505 mV F F p T = 25 C j I reverse current V = 20 V t 3 ms 0.3 - 30 115 A R R p T = 25 C j V = 40 V t 3 ms 0.3 - 325 1250 A R p T = 25 C jNexperia PMEG4010AESB 40 V, 1 A low VF MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 1 1 2 2 A anode 1 2 sym001 Transparent top view DSN1006-2 (SOD993) 1 The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG4010AESB DSN1006-2 DSN1006-2, leadless ultra small package 2 terminals SOD993 body 1.0 x 0.6 x 0.27 mm 7. Marking Table 4. Marking codes Type number Marking code PMEG4010AESB 4A PMEG4010AESB All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 6 October 2015 2 / 14