PMEG6030EVPX Nexperia

PMEG6030EVP High-temperature 60 V, 3 A Schottky barrier rectifier 28 May 2018 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits Average forward current: I 3 A F(AV) Reverse voltage: V 60 V R Low forward voltage High power capability due to clip-bonding technology Small and flat lead SMD plastic package AEC-Q101 qualified High temperature T 175 C j Capable for reflow and wave soldering 3. Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption application 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I average forward = 0.5 f = 20 kHz T 165 C - - 3 A F(AV) sp current square wave V reverse voltage T = 25 C - - 60 V R j V forward voltage I = 3 A t 300 s 0.02 - 420 475 mV F F p T = 25 C pulsed j I reverse current V = 60 V T = 25 C pulsed - 115 400 A R R jNexperia PMEG6030EVP High-temperature 60 V, 3 A Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 1 K A 1 2 sym001 2 A anode CFP5 (SOD128) 1 The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG6030EVP CFP5 plastic, surface mounted package 2 terminals 4 mm pitch 3.8 SOD128 mm x 2.6 mm x 1 mm body 7. Marking Table 4. Marking codes Type number Marking code PMEG6030EVP DB PMEG6030EVP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 28 May 2018 2 / 15