PNE20030EP 200 V, 3 A hyperfast recovery rectifier 18 December 2019 Product data sheet 1. General description High power density, hyperfast recovery rectifier with high-efficiency planar technology, encapsulated in a small and flat lead CFP5 (SOD128) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Reverse voltage V 200 V R Forward current I 3 A F Switching time t 30 ns rr Pt doped life time control Low inductance Small and flat lead SMD plastic package Package height typ. 1 mm High power capability due to clip-bond technology Planar die design Capable for reflow and wave soldering AEC-Q101 qualified 3. Applications General-purpose rectification Reverse polarity protection Hyperfast switching Freewheeling applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I average forward = 0.5 f = 20 kHz square wave T - - 3 A F(AV) sp current 155 C V repetitive peak reverse T = 25 C - - 200 V RRM j voltage V reverse voltage - - 200 V R V forward voltage I = 3 A T = 25 C 1 - 875 980 mV F F j I = 3 A T = 125 C 1 - 730 820 mV F j I reverse current V = 200 V T = 25 C 1 - - 1 A R R j V = 200 V T = 125 C 1 - 1.5 35 A R j 1 Very short pulse, in order to maintain a stable junction temperature.Nexperia PNE20030EP 200 V, 3 A hyperfast recovery rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode A K 1 2 2 A anode 006aab040 CFP5 (SOD128) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PNE20030EP CFP5 plastic, surface mounted package 2 terminals 4 mm pitch 3.8 SOD128 mm x 2.6 mm x 1 mm body 7. Marking Table 4. Marking codes Type number Marking code PNE20030EP DG 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 601134). Symbol Parameter Conditions Min Max Unit V repetitive peak reverse T = 25 C - 200 V RRM j voltage V reverse voltage - 200 V R V RMS voltage - 140 V RMS I forward current = 1 T 150 C - 4.2 A F sp I average forward current = 0.5 f = 20 kHz square wave T - 3 A F(AV) sp 155 C I non-repetitive peak t = 8.3 ms single half sine wave (applied - 75 A FSM p forward current at rated load condition) T = 25 C j(init) P total power dissipation T 25 C 1 - 0.81 W tot amb 2 - 1.3 W T junction temperature - 175 C j T ambient temperature -55 175 C amb T storage temperature -65 175 C stg 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . PNE20030EP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 18 December 2019 2 / 12