PSMN6R0-30YL Nexperia

PSMN6R0-30YL N-channel 30 V 6 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High efficiency due to low switching Suitable for logic level gate drive and conduction losses sources 1.3 Applications Class-D amplifiers Motor control DC-to-DC converters Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --30 V DS j j I drain current T =25C V =10V --79 A D mb GS see Figure 1 total power T = 25 C see Figure 2 --55 W P tot mb dissipation T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =15A -4.266 m DSon GS D resistance T =25C j Dynamic characteristics Q gate-drain charge V = 4.5 V I =10A -3.08-nC GD GS D V =12V see Figure 14 DS Q total gate charge - 11 - nC G(tot) see Figure 15 Avalanche ruggedness E non-repetitive V =10V T =25C --26 mJ DS(AL)S GS j(init) drain-source I =73A V 30 V D sup R =50 unclamped avalanche energy GS LFPAKPSMN6R0-30YL NXP Semiconductors N-channel 30 V 6 m logic level MOSFET in LFPAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN6R0-30YL LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 30 V DS j j V peak drain-source voltage t 25 ns f 500 kHz E 110 nJ -35 V DSM p DS(AL) pulsed V drain-gate voltage T 25 C T 175 C R =20k -30 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10 V T = 100 C see Figure 1 -56 A D GS mb V =10 V T =25 C see Figure 1 -79 A GS mb I peak drain current pulsed t 10 s T =25C - 292 A DM p mb see Figure 3 P total power dissipation T =25 C see Figure 2 -55 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25C - 73 A S mb I peak source current pulsed t 10 s T = 25 C - 292 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10 V T =25C I =73A -26 mJ DS(AL)S GS j(init) D avalanche energy V 30 V R =50 unclamped sup GS PSMN6R0-30YL All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 04 10 March 2011 2 of 14