-SemiconductorsThe PD632BA with MOSFET N Trench 30V 105A 2.3V @ 250uA 3.7 mΩ @ 40A, 10V TO-252 RoHS is an electronic component manufactured by NIKO-Semiconductors. This device is designed for use in various electronics applications, such as power management, motor control, power supply and signal amplification. The component is a vertical trench, high-performance, insulated gate, N-channel, depletion-mode MOSFET. It is housed in a TO-252 (DPAK) package and is RoHS compliant. The MOSFET features an ON-state resistance of 3.7 mΩ @ 40 A and a breakdown voltage (BVdss) of 30V. The maximum current could go up to 105A, and the gate voltage is 2.3V @ 250 uA. This device also has a low gate charge and is capable of providing a high switching speed.