1N957B 992B, e3
WWW.Microsemi .COM
(DDO-3O-355))
1N957B, -1 thru 1N992B, -1, e3 DO-35
Silicon 500 mW Zener Diodes
SCOTTSDALE DIVISION
DESCRIPTION APPEARANCE
The popular 1N957B thru 1N992B series of 0.5 watt Zener Voltage
DO-35
Regulators provides a selection from 6.8 to 200 volts in standard 5% or
(DO-204AH)
10% tolerances as well as tighter tolerances identified by different suffix
letters on the part number. These glass axial-leaded DO-35 Zeners are
also optionally available with an internal-metallurgical-bond option by
adding a -1 suffix as well as RoHS Compliant by adding an e3 suffix.
Microsemi also offers numerous other Zener products to meet higher and
lower power applications.
IMPORTANT: For the most current data, consult MICROSEMIs website: 1N957B 992B, e3
WWW.Microsemi .COM
(DO-35)
1N957B, -1 thru 1N992B, -1, e3 DO-35
Silicon 500 mW Zener Diodes
SCOTTSDALE DIVISION
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ELECTRICAL CHARACTERISTICS* @ 25 C
NOMINAL MAX. DC
ZENER ZENER ZENER MAX. SURGE MAX. REVERSE
MAX. ZENER IMPEDANCE
VOLTAGE TEST CURRENT CURRENT LEAKAGE MAX. TEMP.
(Note 3)
JEDEC
(Note 2) CURRENT (Note 4) (Note 5) CURRENT COEFFICIENT
TYPE
V I I I I @ V
NUMBER Z ZT Z @ I Z @ I ZM ZSM R R VZ
ZT ZT ZK ZK
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(Note 1)
VOLTS mA OHMS OHMS mA mA mA A VOLTS %/ C
1N957B 6.8 18.5 4.5 700 1.0 55 300 150 5.2 +0.05
1N958B 7.5 16.5 5.5 700 .5 50 275 75 5.7 +0.058
1N959B 8.2 15.0 6.5 700 .5 45 250 50 6.2 +0.065
1N960B 9.1 14.0 7.5 700 .5 41 225 25 6.9 +0.068
1N961B 10 12.5 8.5 700 .25 38 200 10 7.6 +0.075
1N962B 11 11.5 9.5 700 .25 32 175 5 8.4 +0.076
1N963B 12 10.5 11.5 700 .25 31 160 5 9.1 +0.077
1N964B 13 9.5 13.0 700 .25 28 150 5 9.9 +0.079
1N965B 15 8.5 16 700 .25 25 130 5 11.4 +0.082
1N966B 16 7.8 17 700 .25 24 120 5 12.2 +0.083
1N967B 18 7.0 21 750 .25 20 110 5 13.7 +0.085
1N968B 20 6.2 25 750 .25 18 100 5 15.2 +0.086
1N969B 22 5.6 29 750 .25 16 90 5 16.7 +0.087
1N970B 24 5.2 33 750 .25 15 80 5 18.2 +0.088
1N971B 27 4.6 41 750 .25 13 70 5 20.6 +0.090
1N972B 30 4.2 49 1000 .25 12 65 5 22.8 +0.091
1N973B 33 3.8 58 1000 .25 11 60 5 25.1 +0.092
1N974B 36 3.4 70 1000 .25 10 55 5 27.4 +0.093
1N975B 39 3.2 80 1000 .25 9.5 46 5 29.7 +0.094
1N976B 43 3.0 93 1500 .25 8.8 44 5 32.7 +0.095
1N977B 47 2.7 105 1500 .25 7.9 40 5 35.8 +0.095
1N978B 51 2.5 125 1500 .25 7.4 37 5 38.8 +0.096
1N979B 56 2.2 150 2000 .25 6.8 35 5 42.6 +0.096
1N980B 62 2.0 185 2000 .25 6.0 30 5 47.1 +0.097
1N981B 68 1.8 230 2000 .25 5.5 28 5 51.7 +0.097
1N982B 75 1.7 270 2000 .25 5.0 26 5 56.0 +0.098
1N983B 82 1.5 330 3000 .25 4.6 23 5 62.2 +0.098
1N984B 91 1.4 400 3000 .25 4.1 21 5 69.2 +0.099
1N985B 100 1.3 500 3000 .25 3.7 18 5 76.0 +0.11
1N986B 110 1.1 750 4000 .25 3.3 16 5 83.6 +0.11
1N987B 120 1.0 900 4500 .25 3.1 15 5 91.2 +0.11
1N988B 130 0.95 1100 5000 .25 2.7 13 5 98.8 +0.11
1N989B 150 0.85 1500 6000 .25 2.4 12 5 114.0 +0.11
1N990B 160 0.80 1700 6500 .25 2.2 11 5 121.6 +0.11
1N991B 180 0.68 2200 7100 .25 2.0 10 5 136.8 +0.11
1N992B 200 0.65 2500 8000 .25 1.8 9 5 152.0 +0.11
* JEDEC Registered Data
NOTE 1: The JEDEC type numbers shown (B suffix) have a +/-5% tolerance on nominal Zener voltage. The suffix A is used to identify +/-
10% tolerance; suffix C is used to identify +/-2%; and suffix D is used to identify +/-1% tolerance; no suffix indicates +/-20%
tolerance.
NOTE 2: Zener voltage (V ) is measured after the test current has been applied for 20 +/- 5 seconds. The device shall be suspended by its
Z
leads with the inside edge of the mounting clips between .375 and .500 from the body. Mounting clips shall be maintained at a
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temperature of 25 +8/ -2 C.
or
NOTE 3: The zener impedance is derived when a 60 cycle ac current having an rms value equal to 10% of the dc zener current (I
ZT
I ) is superimposed on I or I . Zener impedance is measured at 2 points to ensure a sharp knee on the breakdown curve
ZK ZT ZK
and to eliminate unstable units. See MicroNote 202 for variation in dynamic impedance with different zener currents.
NOTE 4: The values of I are calculated for a +/- 5% tolerance on nominal zener voltage. Allowance has been made for the rise in zener
ZM
voltage above V which results from zener impedance and the increase in junction temperature as power dissipation approaches
ZT
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400 mW. In the case of individual diodes I is that value of current which results in a dissipation of 400 mW at 75 C lead
ZM
temperature at 3/8 from body.
NOTE 5: The surge for I is a square wave or equivalent half-sine wave pulse of 1/120 sec. duration.
ZSM
Copyright 2005
Microsemi
Page 2
10-18-2005 REV C
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503