MJ10015 & MJ10016 TNPN, Si, Darlington w /BaseEmitter Speedup Diode TO3 Type Package Description: The MJ10015 and MJ10016 are Darlington transistors in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch mode applications. Applications: Continuous Collector Current (I = 50A) C Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Absolute Maximum Ratings: CollectorEmitter Voltage, V CEV MJ10015 ...................................................................... 600V MJ10016 ...................................................................... 700V CollectorEmitter Voltage, V CEO(SUS) MJ10015 ...................................................................... 400V MJ10016 ...................................................................... 500V EmitterBase Voltage, V ........................................................ 8.0V EBO Collector Current Continuous, I ............................................................... 50A C Peak, I ................................................................... 75A CM Base Current, I ................................................................... 10A B Total Power Dissipation, P D T = +25C ................................................................ 250W C T = +100C ............................................................... 143W C Derate Above +25 C ........................................................ 1.43W/ C Operating Junction Temperature Range, T .................................. 65 to +200C j Storage Temperature Range, T .......................................... 65 to +200C stg Thermal Resistance, Junction toCase, R ..................................... 0.7 C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Off Characteristics CollectorEmitter Sustaining Voltage MJ10015 V I = 100mA, I = 0, V = Rated V 400 V CEO(SUS) C B CLAMP CEO MJ10016 500 V Collector Cutoff Current I V = Rated Value, V = 1.5V 0.25 mA CEV CEV BE(OFF) Emitter Cutoff Current I V = 2.0V, I = 0 350 mA EBO EB c Rev. 316Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit On Characteristics (Note 1) DC Current Gain h I = 20A, V = 5.0V 25 FE c CE I = 40A, V = 5.0V 10 c CE CollectorEmitter Saturation Voltage V I = 20A, I = 1.0A 2.2 V CE(sat) C B I = 50A, I = 10A 5.0 V C B BaseEmitter Saturation Voltage V I = 20A, I = 1.0A 2.75 V BE(sat) C B Diode Forward Voltage V I = 20A 5.0 V F F Dynamic Characteristics Output Capacitance C V = 10V, I = 0, f = 100kHz 750 pF ob CB E Switching Characteristics Delay Time t 0.3 V = 250V, I = 20A, I = 1.0A, us d CC C B1 V = 5V, tp = 25s, Duty Cycle 2% BE(off) Rise Time t 1.0 us r Storage Time t 2.5 us s Fall Time t 1.0 us f Note 1. Pulse Test: Pulse width = 300s, Duty Cycle 2%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane C B .312 (7.93) Min .060 (1.52) Emitter 1.187 (30.16) 50 8 E .665 .215 (5.45) (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Base Collector/Case