NTE159 Silicon PNP Transistor Audio Amplifier, Switch (Compl to NTE123AP) Absolute Maximum Ratings: Collector-Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CEO Collector-Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CBO Emitter-Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA C Total Device Dissipation (T = 25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW A D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/ C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C stg Thermal Resistance, Junction to Case, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3 C/W JC Thermal Resistance, Junction to Ambient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 C/W JA Note 1. Matched complementary pairs are available upon request (NTE159MCP). Matched com plementary pairs have their gain specification (h ) matched to within 10% of each other. FE Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector-Emitter Breakdown Voltage V I = 10mA, I = 0, Note 2 80 - - V (BR)CEO C B Collector-Base Breakdown Voltage V I = 10A, I = 0 80 - - V (BR)CBO C E Emitter-Base Breakdown Voltage V I = 10A, I = 0 5 - - V (BR)EBO E C Collector Cutoff Current I V = 50V, I = 0 - - 50 nA CBO CB E V = 50V, I = 0, T = +75C - - 5 A CB E A Emitter Cutoff Current I - - 100 nA EBO ON Characteristics (Note 2) DC Current Gain h V = 10V, I = 100A 25 - - FE CE C V = 10V, I = 1mA 40 - - CE C V = 10V, I = 10mA 50 - 250 CE C V = 10V, I = 100mA 40 - - CE C V = 10V, I = 500mA 30 - - CE C Collector-Emitter Saturation Voltage V I = 150mA, I = 15mA - - 0.15 V CE(sat) C B I = 500mA, I = 50mA - - 0.5 V C B Base-Emitter Saturation Voltage V I = 150mA, I = 15mA - - 0.9 V BE(sat) C B I = 500mA, I = 50mA - - 1.1 V C B Note 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.Electrical Characteristics (Cont d): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics Output Capacitance C V = 20V, I = 0, f = 1MHz - - 30 pF ob CB E Input Capacitance Ci V = 500mV, f = 1MHz - - 110 pF b BE Small-Signal Current Gain h I = 500mA, V = 10V, f = 100MHz 1 - 5 fe C CE Noise Figure NF I = 100mA, V = 10V, R = 1k, - - 3 dB C CE S f = 1kHz, B = 1Hz W Switching Characteristics Turn-On Time t V = 30V, I = 500mA, - - 100 ns on CC C I = I = 50mA B1 B2 Turn-Off Time t - - 400 ns off .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max