NTE184 (NPN) & NTE185 (PNP) Silicon Complementary Transistors Audio Power Amp, Switch Description: The NTE184 (NPN) and NTE185 (PNP) are silicon complementary transistors in a TO126 plastic package designed for use in power amplifier and switching circuits. Features: Excellent Safe Area Limits Absolute Maximum Ratings: CollectorEmitter Voltage, V 80V CEO CollectorBase Voltage, V . 80V CB EmitterBase Voltage, V . 5V EB Collector Current, I . 4A C Base Current, I 1A B Total Power Dissipation (T = +25C), P 40W C D Derate Above 25C . 320mW/C Operating Junction Temperature Range, T 65 to +150C J Storage Temperature Range, T 65 to +150C stg Thermal Resistance, JunctiontoCase, R 3.12C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 0.1A, I = 0, Note 1 80 V CEO(sus) C B Collector Cutoff Current I V = 80V, I = 0 1.0 mA CEO CE B I V = 80V, V = 1.5V 0.1 mA CEX CE EB(off) V = 80V, V = 1.5V, T = +150C 2.0 mA CE EB(off) C I V = 80V, I = 0 0.1 mA CBO CB E Emitter Cutoff Current I V = 5V, I = 0 1.0 mA EBO BE CElectrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h I = 1.5A, V = 2V 20 80 FE C CE I = 4A, V = 2V 7 C CE CollectorEmitter Saturation Voltage V I = 1.5A, I = 0.15A 0.6 V CE(sat) C B I = 4A, I = 1A 1.4 V C B BaseEmitter ON Voltage V I = 1.5A, V = 2V 1.2 V BE(on) C CE Dynamic Characteristics Current GainBandwidth Product f I = 1A, V = 10V, f = 1MHz 2.0 MHz T C CE Note 1. Pulse test: Pulse Width 300 s, Duty Cycle 2%. Note 2. NTE184MP is a matched pair of NTE184 with their DC Current Gain (h ) matched to within FE 10% of each other. Note 3. NTE185MCP is a matched complementary pair containing 1 each of NTE184 (NPN) and NTE185 (PNP)330 (8.38) Max .175 (4.45) .450 Max (11.4) Max .118 (3.0) Dia .655 (16.6) Max .030 (.762) Dia EC B .090 (2.28) .130 (3.3) Max