NTE3044 Optoisolator NPN Darlington Transistor Output Description: The NTE3044 consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector in an 6Lead DIP type package. This device is designed for use in applications requiring high sensitivity at a low input current. Features: High Sensitivity to Low Input Drive Current High Collector Emitter Breakdown Voltage No Base Connection for Improved Noise Immunity Applications: Appliances, Measuring Instruments I/O Interfaces for Computers Programmable Controllers Portable Electronics Interfacing and Coupling Systems of Different Potentials and Impedances Solid State Relays Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Input LED Reverse Voltage, V ................................................................. 3V R Continuous Forward Current, I .................................................... 60mA F LED Power Dissipation (with Negligible Power in Output Detector, T = +25C), P ..... 120mW A D Derate Above 25C .................................................... 1.41mW/C Output Detector CollectorEmitter Voltage, V ...................................................... 80V CEO EmitterCollector Voltage, V ....................................................... 5V ECO Detector Power Dissipation (with Negligible Power in Output Detector, T = +25C), P . 150mW A D Derate Above 25C .................................................... 1.76mW/C Total Device Isolation Surge Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), V ........... 7500V ISO Total Device Power Dissipation (T = +25C), P ................................... 250mW A D Derate Above 25C .................................................... 2.94mW/C Ambient Operating Temperature Range, T .................................. 55 to +100C A Storage Temperature Range, T .......................................... 55 to +150C stg Lead Temperature (During Soldering, 1/16 from Case, 10sec), T ..................... +260C L Note 1. Isolation surge voltage is an internal dielectric breakdown rating. For this test, Pin1 and Pin2 are common, and Pin4, Pin5, and Pin6 are common. Rev. 816Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Input LED Reverse Leakage Current I V = 3V 0.05 10 A R R Forward Voltage V I = 10mA 1.15 2.0 V F F Capacitance C V = 0, f = 1MHz 18 pF R Photodarlington (I = 0) F CollectorEmitter Dark Current I V = 60V 1 A CEO CE CollectorEmitter Breakdown Voltage V I = 1mA 80 V (BR)CEO C EmitterCollector Breakdown Voltage V I = 100A 5 V (BR)ECO E Coupled Collector Output Current I V = 1.5V, I = 10mA 30 mA C CE F Isolation Surge Voltage V 60Hz Peak AC, 5sec, Note 2, Note 3 7500 V ISO 11 Isolation Resistance R V = 500V, Note 2 10 ISO Isolation Capacitance C V = 0, f = 1MHz, Note 2 0.2 pF ISO Switching TurnOn Time t V = 10V, R = 100, 3.5 s on CC L I = 5mA F TurnOff Time t 95 s off Rise Time t 1 s r Fall Time t 2 s f Note 2. For this test, LED Pin1 and Pin2 are common and Phototransistor Pin4 and Pin5 are common. Note 3. Isolation Surge Voltage, V , is an internal device dielectric breakdown rating. ISO Pin Connection Diagram Anode 1 6 N.C. 2 5 Cathode Collector N.C. 3 4 Emitter