NTE3089 Optoisolator AC Input, Silicon NPN Phototransistor Output Description: The NTE3089 consists of two gallium arsenide LEDs connected in inverse parallel and coupled with a silicon phototransistor in a 6-Lead DIP type package. Features: AC or Polarity Insensitive Inputs Fast Switching Speeds Built-In Reverse Polarity Input Protection High Isolation Voltage High Isolation Resistance I/O Compatible with Integrated Circuits Absolute Maximum Ratings: (T = +25C, unless otherwise specified) A Infrared Emitting Diode (LED) Continuous Forward Current, I 60mA F Peak Forward Current (Pulse Width = 1s, 330pps), I 1A F Power Dissipation (T = +25C, Note 1), P . 100mW A D Derate Above 25C 1.33mW/ C Phototransistor Collector-Emitter Voltage, V 30V CEO Collector-Base Voltage, V . 70V CBO Emitter-Base Voltage, V 5V EBO Continuous Collector Current, I 100mA C Power Dissipation (T = +25C), P 300mW A D Derate Above 25C . 4.0mW/ C Power Dissipation (T = +25C, Note 1), P . 500mW A D Derate Above 25C . 6.7mW/ C Total Device Steady-State Isolation Voltage (Input-to-Output) Peak . 1500V RMS 1060V Surge Isolation Voltage (Input-to-Output) Peak . 2500V RMS 1770V Operating Temperature Range, T -55 to +150C J Storage Temperature Range, T -55 to +150C stg Lead Temperature (During Soldering for 10sec), T +250 C L Note 1. T indicates Collector lead temperature 1/32 from case. CElectrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Infrared Emitting Diode (LED) Forward Voltage V I = 10mA - - 1.5 V F F Capacitance C V = 0, f = 1MHz - - 100 pF J R Phototransistor Collector-Base Breakdown Voltage V I = 100A, I = 0 70 - - V (BR)CBO C F Collector-Emitter Breakdown Voltage V I = 10mA, I = 0 30 - - V (BR)CEO C F Emitter-Base Breakdown Voltage V I = 100A, I = 0 5 - - V (BR)EBO E F Collector Dark Current I V = 10V, I = 0 - - 100 nA CEO CE F Coupled DC Current Transfer Ratio CTR V = 10V, I = 10mA 20 - - % CE F Collector-Emitter Saturation Voltage V I = 0.5mA, I = 10mA - - 0.4 V CE(sat) C F - Isolation Resistance R V = 500V, Note 2 100 - G (I-O) (I-O) Note 2. Tests of Input-to-Output isolation current resistance, and capacitance are performed with the input terminals (diode) shorted together and the output terminals (transistors) shorted together. Pin Connection Diagram LED 1 Anode/ 1 6 Base LED 2 Cathode LED 1 Cathode/ 2 5 Collector LED 2 Anode N.C. 3 4 Emitter 6 54 .260 (6.6) Max 12 3 .070 (1.78) Max .350 (8.89) .300 (7.62) Max .200 (5.08) Max .350 (8.89) Max .085 (2.16) Max .100 (2.54)