X-On Electronics has gained recognition as a prominent supplier of NTE3089 Transistor Output Optocouplers across the USA, India, Europe, Australia, and various other global locations. NTE3089 Transistor Output Optocouplers are a product manufactured by NTE. We provide cost-effective solutions for Transistor Output Optocouplers, ensuring timely deliveries around the world.

NTE3089 NTE

NTE3089 electronic component of NTE
NTE3089 NTE
NTE3089 Transistor Output Optocouplers
NTE3089  Optoelectronics

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See Product Specifications
Part No. NTE3089
Manufacturer: NTE
Category: Transistor Output Optocouplers
Description: Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP
Datasheet: NTE3089 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
11: USD 6.8502 ea
Line Total: USD 75.35 
Availability - 4
Ship by Thu. 30 Jan to Wed. 05 Feb
MOQ: 11  Multiples: 1
Pack Size: 1
Availability Price Quantity
4
Ship by Thu. 30 Jan to Wed. 05 Feb
MOQ : 11
Multiples : 1
11 : USD 6.8502
50 : USD 4.8169
100 : USD 4.7381
250 : USD 4.5282
500 : USD 4.2656
1000 : USD 4.2
2500 : USD 4.095
5000 : USD 3.9244

11
Ship by Tue. 28 Jan to Thu. 30 Jan
MOQ : 1
Multiples : 1
1 : USD 6.5562
4 : USD 4.6452
11 : USD 4.3953

   
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Product Category
RoHS - XON
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We are delighted to provide the NTE3089 from our Transistor Output Optocouplers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE3089 and other electronic components in the Transistor Output Optocouplers category and beyond.

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NTE3089 Optoisolator AC Input, Silicon NPN Phototransistor Output Description: The NTE3089 consists of two gallium arsenide LEDs connected in inverse parallel and coupled with a silicon phototransistor in a 6-Lead DIP type package. Features: AC or Polarity Insensitive Inputs Fast Switching Speeds Built-In Reverse Polarity Input Protection High Isolation Voltage High Isolation Resistance I/O Compatible with Integrated Circuits Absolute Maximum Ratings: (T = +25C, unless otherwise specified) A Infrared Emitting Diode (LED) Continuous Forward Current, I 60mA F Peak Forward Current (Pulse Width = 1s, 330pps), I 1A F Power Dissipation (T = +25C, Note 1), P . 100mW A D Derate Above 25C 1.33mW/ C Phototransistor Collector-Emitter Voltage, V 30V CEO Collector-Base Voltage, V . 70V CBO Emitter-Base Voltage, V 5V EBO Continuous Collector Current, I 100mA C Power Dissipation (T = +25C), P 300mW A D Derate Above 25C . 4.0mW/ C Power Dissipation (T = +25C, Note 1), P . 500mW A D Derate Above 25C . 6.7mW/ C Total Device Steady-State Isolation Voltage (Input-to-Output) Peak . 1500V RMS 1060V Surge Isolation Voltage (Input-to-Output) Peak . 2500V RMS 1770V Operating Temperature Range, T -55 to +150C J Storage Temperature Range, T -55 to +150C stg Lead Temperature (During Soldering for 10sec), T +250 C L Note 1. T indicates Collector lead temperature 1/32 from case. CElectrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Infrared Emitting Diode (LED) Forward Voltage V I = 10mA - - 1.5 V F F Capacitance C V = 0, f = 1MHz - - 100 pF J R Phototransistor Collector-Base Breakdown Voltage V I = 100A, I = 0 70 - - V (BR)CBO C F Collector-Emitter Breakdown Voltage V I = 10mA, I = 0 30 - - V (BR)CEO C F Emitter-Base Breakdown Voltage V I = 100A, I = 0 5 - - V (BR)EBO E F Collector Dark Current I V = 10V, I = 0 - - 100 nA CEO CE F Coupled DC Current Transfer Ratio CTR V = 10V, I = 10mA 20 - - % CE F Collector-Emitter Saturation Voltage V I = 0.5mA, I = 10mA - - 0.4 V CE(sat) C F - Isolation Resistance R V = 500V, Note 2 100 - G (I-O) (I-O) Note 2. Tests of Input-to-Output isolation current resistance, and capacitance are performed with the input terminals (diode) shorted together and the output terminals (transistors) shorted together. Pin Connection Diagram LED 1 Anode/ 1 6 Base LED 2 Cathode LED 1 Cathode/ 2 5 Collector LED 2 Anode N.C. 3 4 Emitter 6 54 .260 (6.6) Max 12 3 .070 (1.78) Max .350 (8.89) .300 (7.62) Max .200 (5.08) Max .350 (8.89) Max .085 (2.16) Max .100 (2.54)

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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