NTE5377 & NTE5378 Silicon Controlled Rectifier (SCR) for High Speed Switching, 475 Amp, TO118 Maximum Ratings and Electrical Characteristics: (T = +125C unless otherwise specified) J Repetitive Peak Voltages, V , V DRM RRM NTE5377 ................................................................... 600V NTE5378 .................................................................. 1200V Non Repetitive Peak Reverse Blocking Voltage, V RSM NTE5377 ................................................................... 700V NTE5378 .................................................................. 1300V Average On State Current (180 Conduction, Half Sine Wave, T = +75C), I ......... 330A C T(AV) RMS OnState Current (DC at T = +75C), I ................................... 520A C T(RMS) Peak One Cycle Non Repetitive Surge Current (Sinusoidal Half Wave, Initial T = +125C), I J TSM No Voltage Reapplied t = 10ms ............................................................... 9000A t = 8.3ms ............................................................... 9420A 100% V Reapplied RRM t = 10ms ............................................................... 7570A t = 8.3ms ............................................................... 7920A 2 2 Maximum I t for Fusing (Sinusoidal Half Wave, Initial T = +125C), I t J No Voltage Reapplied 2 t = 10ms ............................................................. 405kA s 2 t = 8.3ms ............................................................. 370kA s 100% V Reapplied RRM 2 t = 10ms ............................................................. 287kA s 2 t = 8.3ms ............................................................. 262kA s 2 2 2 Maximum I t for Fusing (t = 0.1 to 10ms, No Voltage Reapplied), I t .............. 4050kA s Low Level Value of Threshold Voltage (16.7% x x I < I < x I ), V ........ 0.834V T(AV) T(AV) T(TO)1 High Level Value of Threshold Voltage (I > x I ), V ......................... 0.898V T(AV) T(TO)2 Low Level Value of On State Slope Resistance, r t1 (16.7% x x I < I < x I ) ......................................... 0.687m T(AV) T(AV) High Level Value of On State Slope Resistance (I > x I ), r ................... 0.636m T(AV) t2 Maximum OnState Voltage (I = 1000A, t = 10ms Sine Pulse), V .................. 1.52V pk p TM Maximum Holding Current (T = +25C, Anode Supply 12V Resistive Load), I .......... 600mA J H Typical Latching Current (T = +25C, Anode Supply 12V Resistive Load), I ........... 1000mA J L Maximum on Repetitive Rate of Rise of Turned On Current, dI/dt (Gate Drive 20V, 20 with t 1s, Anode voltage 80% V ) .............. 1000A/ s r DRM Typical Delay Time (Gate Current A, dI /dt = 1A/s, V = 0.67% V ), t ............... 1.0 s g d DRM d Typical TurnOff Time, t q (I = 550A, dI/dt = 40A/s, V = 50V, dV/dt = 20V/s, gate 0V 100 , t = 500s) .. 100 s TM R p Maximum Critical Rate of Rise of OffState Voltage (To 80% V ), dv/dt ............. 500V/ s DRM Repetitive Peak Off State Current (At Rated V ), I ............................. 50mA DRM DRM Repetitive Peak Reverse Current (At Rated V ), I .............................. 50mA RRM RRM Maximum Peak Gate Power (t 5ms), P .......................................... 10W p GMMaximum Ratings and Electrical Characteristics (Contd): (T = +125 C unless otherwise specified) J Maximum Average Gate Power (f = 50Hz, d% = 50), P .............................. 2W G(AV) Maximum Peak Positive Gate Current (t 5ms), I .................................... 3A p GM Maximum Peak Positive Gate Voltage (t 5ms), +V ................................. 20V p GM Maximum Peak Negative Gate Voltage (t 5ms), V ................................. 5V p GM Typical DC Gate Current Required to Trigger (12V Anode toCathode Applied), I GT T = 40C ............................................................... 200mA J T = +25C J Typical ................................................................ 100mA Maximum ............................................................. 200mA T = +125C ............................................................... 50mA J Typical DC Gate Voltage Required to Trigger (12V Anode toCathode Applied), V GT T = 40C ................................................................. 2.5V J T = +25C J Typical .................................................................. 1.8V Maximum ............................................................... 3.0V T = +125C ................................................................ 1.1V J Maximum Gate Current Not To Trigger, I .......................................... 10mA GD Maximum Gate Voltage Not To Trigger, V ......................................... 0.25V GD Maximum Operating Junction Temperature Range, T ......................... 40 to +125C J Maximum Storage Temperature Range, T ................................. 40 to +150C stg Maximum Thermal Resistance, Junction toCase (DC Operation), R .............. 0.10K/W thJC Maximum Thermal Resistance, Case toHeatsink, R thCHS (Mounting Surface, Smooth, Flat and Greased) ............................... 0.3K/W Mounting Torque, 10% (Non Lubricated Threads) .................... 48.5N m (425lbf in) 1.750 (44.45) Across Flats .146 (3.71) Dia (2 Holes) .730 (18.5) Cathode Potential (Red) .343 (8.71) Dia Gate (White) 9.660 (245.4) Cathode (Red) 10.06 2.740 (255.5) (69.6) 1.410 (35.8) .780 (19.8) 3/416 UNF2A (Terminal 4) Anode 1.060 (26.9)