NTE5514 NTE

NTE5514 thru NTE5516 Silicon Controlled Rectifier (SCR) 20 Amp, 1/2 Press Fit Absolute Maximum Ratings: Repetitive Peak OffState Voltage (T = +100C), V J DRM NTE5514 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5515 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5516 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Repetitive Peak Reverse Voltage (T = +100C), V J RRM NTE5514 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5515 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5516 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On State Current (T = +75C), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A C T(RMS) Peak Surge (NonRepetitive) On State Current (One Cycle, 50Hz or 60Hz), I . . . . . . . . . 200A TSM Peak GateTrigger Current (3s Max), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A GTM Peak Gate Power Dissipation (I I for 3s Max), P . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W GT GTM GM Average Gate Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W G(AV) Operating Temperatue Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C opr Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +100C stg Typical Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3C/W thJC Electrical Characteristics: (At Maximum Ratings and Specified Case Temperatures) Parameter Symbol Test Conditions Min Typ Max Unit Peak OffState Current I , T = +100C, Gate Open, 2.0 mA DRM J I V and V = Max. Rating RRM DRM RRM Maximum OnState Voltage (Peak) V T = +25C 1.9 V TM C Peak OnState Current I 40 A TM DC Holding Current I T = +25C, Gate Open 50 mA H C DC GateTrigger Current I Anode Voltage = 12V, R = 30, T = +25C 25 mA GT L C DC GateTrigger Voltage V Anode Voltage = 12V, R = 30, T = +25C 2.0 V GT L C Gate Controlled TurnOn Time t t + t , I = 150mA 2.5 s gt d r GT Critical RateofRise of Critical T = +100C, Gate Open 100 V/s C OffState Voltage dv/dt.155 (3.93) Max Cathode Gate .085 .063 (1.6) (2.15) .767 (19.5) Max .380 (9.65) Max .475 (12.09) Max Anode .505 (12.85) Max