NTE5629 TRIAC 400V , 4Amp RM Description: The NTE5629 TRIAC is a bidirectional triode thyristor in a TO202 type case. This device may be switched from offstate to conduction for either polarity of applied voltage with positive or negative gatetrigger current. The NTE5629 can be driven directly with IC and MOS devices and is designed for control applications in lighting, heating, cooling, and static switching relays. Absolute Maximum Ratings: Repetitive Peak OffState Voltage (Gate Open, T = +110C, Note 1), V . . . . . . . . . . . . . . 400V J DRM RMS OnState Current (T = +80C, Conduction Angle = 360), I . . . . . . . . . . . . . . . . . . . 4A C T(RMS) NonRepetitive Peak Surge OnState Current (OneCycle, at 50Hz or 60Hz), I . . . . . . . . 40A TSM Peak GateTrigger Current (for 3 s Max), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2A GTM Peak GatePower Dissipation (I I ), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W GT GTM GM Average GatePower Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W G(AV) Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +110C opr Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4C/W Typ thJC Electrical Characteristics: (At Specified Case Temperature) Peak OffState Current (Gate Open, T = +110C, V = 400V, Note 1), I . . . . . 0.5mA Max C DRM DRM Maximum OnState Voltage (T = +25C, I = 4A, Note 1), V . . . . . . . . . . . . . . . . . . . . . 1.6V Max C T TM DC Holding Current (Gate Open, T = +25C, Note 1), I . . . . . . . . . . . . . . . . . . . . . . . . 5mA Max C Hold Critical RateofRise of OffState Voltage, Critical dv/dt (V = 400V, Gate Open, T = +110C, Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V/ s D C Critical rateofRise of commutation Voltage, Commutating dv/dt (V = 400V, I = 4A, Gate Unenergized, T = +80C, Note 1) . . . . . . . . . . . . . . . . . . . . 1V/ s D T C DC GateTrigger Current (V = 12VDC, R = 60 , T = +25C), I . . . . . . . . . . . . . . . . . 3mA Max D L C GT (T + Gate +, T Gate ) Quads I and III 2 2 (T + Gate , T Gate +) Quads II and IV 2 2 DC GateTrigger Voltage (V = 12VDC, R = 60 , T = +25C), V . . . . . . . . . . . . . . . . . . 2V Max D L C GT GateControlled TurnOn Time, T gt (V = 400V, I = 80mA, t = 0.1 s, I = 6A (Peak), T = +25C) . . . . . . . . . . . . . . . . . . . 3 s D GT R T C Note 1. All values apply in either direction..380 (9.56) .180 (4.57) .132 (3.35) Dia MT 2 .500 (12.7) .325 1.200 (9.52) (30.48) Ref .070 (1.78) x 45 Chamf .300 (7.62) .050 (1.27) MT 2 .400 (10.16) Min MT Gate 1 .100 (2.54) .100 (2.54)