NTE5661 TRIAC, 10 Amp Description: The NTE5661 is a TRIAC in a TO64 type stud mount package designed primarily for fullwave AC control applications such as light dimmers, motor controls, heating controls, power supplies or wher- ever fullwave silicon gate controlled solidstate devices are needed. TRIAC type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or nega- tive gate triggering. Features: Low ON Voltage Gate Triggering Guaranteed in Four Modes Absolute Maximum Ratings: Repetitive Peak OffState Voltage (T = +100C, Note 1), V . . . . . . . . . . . . . . . . . . . . . . . . . . 50V J DRM OnState RMS Current (T = +75C), I RMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A C T Peak Surge Current (One Full Cycle, 60Hz, T = 40 to +100C), I . . . . . . . . . . . . . . . . . . 100A J TSM 2 2 Circuit Fusing Considerations (T = 40 to +100C, t = 1.0 to 8.3ms), I t . . . . . . . . . . . . . . 40A sec J Peak Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W GM Average Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W G(AV) Peak Gate Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A GM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +100C Operating Junction Temperature Range, T J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2C/W thJC Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50C/W thJA Stud Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 in. lb. Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated block- ing voltage.Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Peak Blocking Current (Either Direction) I V = 50V, T = +100C, Gate Open 2.0 mA DRM DRM J OnState Voltage (Either Direction) V I = 14A Peak 1.3 1.8 V TM TM Gate Trigger Current, Continuous DC I GT All Modes Main Terminal Voltage = 12V, R = 100 40 mA L MT (+), G (+) MT (), G () 50 mA 2 2 Gate Trigger Voltage, Continuous DC V Main Terminal Voltage = 12V, R = 100 0.9 2.0 V GT L V Main Terminal Voltage = 50V, R = 100 , 0.2 V GD L T = +100C J Holding Current (Either Direction) I Main Terminal Voltage = 12V, 30 mA H Gate Open, Initiating Current = 100mA TurnOn Time t I = 14A, I = 100mA 1.5 s on TM GT Blocking Voltage Application Rate dv/dt V = 50V, T = +75C, Gate Open 5.0 V/ s DRM J at Commutation .431 (10.98 Max Gate MT 1 .855 (21.7) Max .125 (3.17) Max .453 (111.5) MT 2 Max 1032 UNF2A