NTE5700thruNTE5705 IndustrialPowerModule Description: TheNTE5700throughNTE5705seriesofIntegratedPowerCircuitsconsistofpowerthyristorsand powerdiodes configured in a single package. Applications include powersupplies, controlcircuits and battery chargers. Features: D Glass Passivated Junctions forGreaterReliability D Electrically Isolated Base Plate D High Dynamic Characteristics Absolute MaximumRatings: MaximumRepetitive Peak Reverse Voltage (V 0), V ............................ 1200V S RRM MaximumNon--Repetitive Peak Reverse Voltage, V ............................... 1300V RSM MaximumRepetitive Peak Off State Voltage Gate Open Circuit, V .................. 1200V DRM ThermalandMechanicalCharacteristics: Junction Operating Temperature Range, T .................................. --40 to +125 C J Storage Temperature Range, T .......................................... --40 to +150 C stg MaximumInternalThermalResistance, One Junction to Case, R thJC DCOperation............................................................ 2.24K/W MaximumThermalResistance, Base to Heatsink, R thCS Mounting Surface Smooth and Greased..................................... 0.10K/W Mounting Torque, Base to Heatsink 10% (Note 1), T .................................. 5Nm Approximate Weight, wt ...................................................... 58g (2.0oz) Note 1. Amountingcompoundisrecommendedandthetorqueshouldbecheckedafteraperiodof about 3 hours to allowforthe spread of the compound.ElectricalCharacteristics: Parameter Symbol Test Conditions Rating Unit ForwardConduction Maximum DC Output Current I T =+85 C, Full Bridge Circuits 25 A O C (NTE5700, NTE5701, NTE5702) Maximum Average On--State I 180 Sine Wave Conduction Circuits 12.5 A T(AV) and Forward Current I (All Types) F(AV) Maximum RMSCurrent I 180 Sine Wave Conduction Circuit 28 A RMS (NTE5702) Maximum Peak, One--Cycle I 10ms 100%V Sinusoidal Half Wave, 300 A TSM RRM NonN --RRepettititivei OOn--SSttatte or ReappliedR li d IIniittiiall TT =TT MaM x J J 8.3ms 315 A oorr FFoorrwwaarrdd CCuurrrreenntt II FFSSMM 10ms 357 A No Voltage RReappliedli d 8.3ms 375 A 2 2 2 Maximum I t for Fusing I t 10ms 100%V Initial T =T Max 450 A s RRM J J ReappliedR li d 2 8.3ms 410 A s 2 10ms 637 A s No Voltage RReappliedli d 2 8.3ms 580 A s 2 2 2 Maximum I t for Fusing I t t = 0.1 to 10ms, No Voltage Reapplied, Note 2 6365 A s Maximum Value of Threshold V T = +125 C 0.82 V T(TO) J Voltage Maximum Value of On--State r T = +125 C 12 m T J Slope Resistance Maximum Peak On--State V I = xI T =+25 C, 1.35 V TM TM T(AV) J or ForF wardd VVoltltage 118080 ConditC ditiion V I = xI 1.35 V FM FM F(AV) Maximum Non--Repetitive Rate di/dt T = +125 C, from 0.67V ,I = xI , 200 A/ s J DRM TM T(AV) of Rise of Turned On Circuit I = 500mA, t <0.5 s, t >6 s g r p Maximum Holding Current I T =+25 C, Anode Supply = 6V, 100 mA H J Resistive Load, Gate Open Circuit Maximum Latching Current I T =+25 C, Anode Supply = 6V, 250 mA L J Resistive Load Triggering Maximum Peak Gate Power P 8.0 W GM Maximum Average Gate Power P 2.0 W G(AV) Maximum Peak Gate Current I 2.0 A GM Maximum Peak Negative Gate --V 10 V GM Voltage T =--40 C 3.0 V MaximumGateVoltageRequired V Anode Supply = 6V J GT tto TTriigger ResistR i tiive LLoadd T =+25 C 2.0 V J T = +125 C 1.0 V J