NTE5844 & NTE5845, NTE5912 thru NTE5933 Silicon Power Rectifier Diode 20 Amp, DO4 Description and Features: The NTE5844, NTE5845, and NTE5912 through NTE5933 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and ma- chine tool controls. Features: High Surge Current Capability High Voltage Available Designed for a Wide Range of Applications Available in Anode toCase or Cathode toCase Style Ratings and Characteristics: Average Forward Current (T = +140C Max), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A C F(AV) Maximum Forward Surge Current (60Hz), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400A FSM 2 2 Fusing Current (60Hz), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 493A s 2 2 Fusing Current, I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7640A s Maximum Reverse Recovery Voltage Range, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 to 1200V RRM Voltage Ratings: (T = +175C) J NTE Type Number V Max V Max V Max. V I Max RRM RSM R R(SR) RM Repetitive Peak NonRepetitive Peak Direct Reverse Minimum Avalanche Reverse Current Cathode Anode Reverse Volt. Reverse Voltage Voltage Voltage Rated V RRM to Case to Case (V) (V) (V) (V) (mA) 5912 5913 50 75 50 12 5914 5915 100 150 100 12 5916 5917 200 275 200 12 5918 5919 300 385 300 12 5920 5921 400 500 400 500 12 5922 5923 500 613 50 613 12 5924 5925 600 725 600 725 12 5928 5929 800 950 800 950 12 5932 5933 1000 1200 1000 1200 12 5844 5845 1200 1400 1200 1350 12Electrical Specifications: Parameter Symbol Test Conditions Rating Unit Maximum Average Forward Current I 180 sinusoidal condition, T = +150C Max 20 A F (AV) C t = 10ms 400 A Maximum Peak OneCycle I Sinusoidal Half Wave, FSM NonRepetitive Surge Current No voltage reapplied t = 8.3ms 425 A t = 10ms 100% rated voltage reapplied, 437 A T = +175C J t = 8.3ms 462 A 2 2 2 t = 10ms 540 A s Maximum I t for Fusing I t No voltage reapplied, Initial T = +175C J 2 t = 8.3ms 493 A s 2 2 Maximum I t for Individual Device t = 10ms 100% rated voltage reapplied 765 A s Fusing 2 t = 8.3ms 700 A s 2 2 2 Maximum I t I t t = 0.1 to 10ms, No voltage reapplied, Note 1 7640 A t Maximum Peak Forward Voltage V I = 63A, T = +25C 1.23 V FM FM J Maximum Value of Threshold V T = +175C 0.78 V M (TO) J Voltage Maximum Value of Forward Slope r T = +175C 7.55 m t J Resistance 2 2 Note 1. I t for time t = I t t x x Thermal Mechanical Specifications: Parameter Symbol Test Conditions Rating Unit Maximum Operation Junction Temperature T 65 to + 175 C J Maximum Storage Temperature T 65 to + 200 C stg Maximum Internal Thermal Resistance R DC operation 1.6 K/W thJC Junction toCase Thermal Resistance, CasetoSink R Mounting surface flat, smooth and 0.25 K/W thCS greased Mounting Torque T Nonlubricated threads 1.2 1.5 mN (10.5 13.5) (inlb) Approximate Weight wt 11 (0.25) g (oz) .437 .250 (6.35) Max (11.1) .175 (4.45) Max Max .060 (1.52) Dia Min 1032 NF2A .405 (10.3) .453 .424 (10.8) Max (11.5) Dia Max Max 1.250 (31.75) Max
