NTE7005 Integrated Circuit 2Phase Stepping Motor Driver Description: The NTE7005 monolithic power IC is a dual bridge driver in a 16Lead DIP type package. The maxi- mum driving current and voltage is 330mA x 12V per bridge. Therefore, the best use for this part is in a twophase bipolar stepping motor driving the head actuator of a 3, to 5.25inch Floppy Disk Drive. Features: 330mA Output Current Capability Dual Bridge Included Power Save Single Input Direction Control Low Output Saturation Voltage Low Supply Current Low Input Current Compatible with TTL, LSTTL, and 5V CMOS Thermal Shutdown Absolute Maximum Ratings: (T = +25C, Note 1 unless otherwise specified) A Logic Stage Supply Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V CC Seeking Supply Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V s1 Holding Supply Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V s2 Input Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to V i CC Peak Seeking Current (t 5ms), I (peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA o DC Seeking Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 330mA os DC Holding current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA OH Power Dissipation (Note 2), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W T Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 to +125C opr Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +125C stg Note 1. The absolute maximum ratings are limiting values, to be applied individually, beyond which the device may be permanently damaged. Functional operation under any of these condi- tions is not guaranteed. Exposing a circuit to its absolute maximum rating for extended peri- ods of time may affect the devices reliability. Note 2. Thermal resistance is as follows: R 1 +60C/W (Soldered on a print circuit board) thJA R 2 +35C/W (Soldered on a print circuit covered with copper sufficiently) thJA R 3 +15C/W (Soldered on Pin4, Pin5, Pin12, and Pin13 with an infinite heat sink) thJARecommended Operating Conditions: Parameter Symbol Test Conditions Min Typ Max Unit Logic Stage Supply Voltage V 4.5 5.0 5.5 V CC Seeking Supply Voltage V 10.2 12.0 13.8 V s1 Holding Supply Voltage V 4.5 5.0 5.5 V s2 Electrical Characteristics: (T = +25C, V = 5V, V = 5V, V = 12V unless otherwise specified) A CC s2 s1 Parameter Symbol Test Conditions Min Typ Max Unit Input Low Voltage V 0.8 V IL Input High Voltage V 2.0 V IH Input Low Current I V = 0.8V 10 A IL I Input High Current I V = 2V 1.0 10 A IH I V = 5.5V 0.5 1.0 mA I Supply Current I PS = 0.8V, V 25 33 mA CC CC I = 0 o V , Note 3 10 20 mA s1 V , Note 4 1.0 mA s2 PS = 2V, V 25 33 mA CC I = 0 o V , Note 3 3 5 mA s1 V , Note 4 5 10 mA s2 Output Transistor Breakdown Voltage V I = 10mA 18 V (BR)CE C R V Saturation Voltage V 1 PS = 0.8V, I = 330mA, Note 5 1.5 2.0 V s1 CE(sat) o V Saturation Voltage V 2 PS = 2V, I = 130mA, Note 5 1.5 2.0 V s2 CE(sat) o Clamp Diode Forward Voltage V I = 330mA Upper 5 V F F Lower 1.5 V Delay Time t I = 330mA 1 5 s PLH o t 1 5 s PHL Note 3. Sum of V (1) and V (2) current S1 S1 Note 4. Sum of V (1) and V (2) current S2 S2 Note 5. Sum of upper and lower saturation voltages Truth Table (For each bridge): Power Save Direction Out Out L L L H+ L H H+ L H L L H H H H L Note: L = Low voltage state H+ = High voltage state (Seeking transistors ON) H = High voltage state (Holding transistors ON)