NTE859/NTE859SM Integrated Circuit Quad, Low Noise, JFET Input Operational Amplifier Description: The NTE859 (14Lead DIP) and NTE859SM (SOIC14 Surface Mount) JFETinput operational am- plifiers are low noise amplifiers with low noise input bias, offset currents, and fast slew rate. The low harmonic distortion and low noise make these devices ideally suited as amplifiers for highfidelity and audio preamplifier applications. Each amplifier features JFETinputs (for high input impedance) coupled with bipolar output stages all integrated on a single monolithic chip. Features: Low Power Consumption Wide CommonMode and Differential Voltage Ranges Low Input Bias and Offset Currents Output ShortCircuit Protection Low Total Harmonic Distortion: 0.003% Typ Low Noise: Vn = 18nVH Typ Z High Input Impedance: JFETInput Stage Internal Frequency Compensation LatchUp Free Operation High Slew Rate: 13V/ s Typ Absolute Maximum Ratings: (T = 0 to +70C unless otherwise specified) A Supply Voltage (Note 1), V (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V CC Supply Voltage (Note1), V () . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V CC Differential Input Voltage (Note 2), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V ID Input Voltage Range (Note 1, Note 3),V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V IDR Duration of Output Short Circuit (Note 4),t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Unlimited S Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 680mW A D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mW/C Operating Ambient Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to +70C A Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Lead Temperature (During Soldering, 1/16 from Case for 10sec), T . . . . . . . . . . . . . . . . . . +260C L Note 1. All voltage values, except differential voltages, are with reapect to the midpoint between V (+) and V (). CC CC Note 2. Differential voltages are at the noninverting input pin with respect to the inverting pin. Note 3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15V, whichever is less. Note 4. The output may be shorted to GND or to either supply. Temperature and/or supply voltages must be limited to ensure that the dissipation rating is not exceeded.Electrical Characteristics: (V = 15V, T = 0 to+70C unless otherwise specified) CC A Parameter Symbol Test Conditions Min Typ Max Unit Input Offset Voltage V T = +25C 3 10 mV V = 0, R = 50 IO A O S 13 mV Temperature Coefficient of Input Offset V V = 0, R = 50 10 V/C IO O S Voltage Input Offset Current I V = 0, Note 6 T = +25C 5 100 pA IO O A 2 nA Input Bias Current I V = 0, Note 6 T = +25C 30 200 pA IB O A 7 nA CommonMode Input Voltage Range V T = +25C 11 12 V ICR A Maximum Peak Output Voltage Range V R = 10k , T = +25C 12 13.5 V OM L A R = 10k 12 V L R = 2k 10 12 V L LargeSignal Differential Voltage A V = 10V, T = +25C 25 200 V/mV VD O A Amplification R 2k L 15 V/mV UnityGain Bandwidth B T = +25C 3 MHz 1 A 12 Input Resistance r T = +25C 10 i A CommonMode Rejection Ratio CMRR V = V min, V = 0, R = 50 , 70 86 dB IC ICR O S T = +25C A SupplyVoltage Rejection Ratio k V = 15V to 9V, V = 0, 70 86 dB SVR CC O ( V / V ) R = 50 , T = +25C CC IO S A Supply Current (Per Amplifier) I No Load, V = 0, T = +25C 1.4 2.5 mA CC O A Crosstalk Attenuation V /V A = 100, T = +25C 120 dB o1 o2 VD A Note 5. All characteristics are measured under openloop conditions with zero commonmode volt- age unless otherwise specified. Note 6. Input bias currents of a FETinput operational amplifier are normal junction reverse currents, which are temperature sensitive. Pulse techniques must be used that will maintain the junc- tion temperatures as close to the ambient temperature as is possible. Operating Characteristics: (V = 15V, T = +25C unless otherwise specified) CC A Parameter Symbol Test Conditions Min Typ Max Unit Slew Rate at Unity Gain SR 8 13 V/ s V = 10V, R = 2k , C = 100pF I L L Rise Time Overshoot Factor t 0.1 s V = 10V, R = 2k , C = 100pF r II LL LL 10 % Equivalent Input Noise Voltage V R = 100 f = 1kHz 18 nV/Hz n S f = 10Hz to 10kHz 4 V Equivalent Input Noise Current I R = 100 , f = 1kHz 0.01 pA/Hz n S Total Harmonic Distortion THD V = 10V, R 1k , R 2k , f = 1kHz 0.003 % O(rms) S L