Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of
74AUP1T98
Low-power configurable gate with voltage-level translator
Rev. 4 15 august 2012 Product data sheet
1. General description
The 74AUP1T98 provides low-power, low-voltage configurable logic gate functions. The
output state is determined by eight patterns of 3-bit input. The user can choose the logic
functions MUX, AND, OR, NAND, NOR, inverter and buffer. All inputs can be connected to
V or GND.
CC
This device ensures a very low static and dynamic power consumption across the entire
V range from 2.3 V to 3.6 V.
CC
The 74AUP1T98 is designed for logic-level translation applications with input switching
levels that accept 1.8 V low-voltage CMOS signals, while operating from either a single
2.5 V or 3.3 V supply voltage.
The wide supply voltage range ensures normal operation as battery voltage drops from
3.6 V to 2.3 V.
This device is fully specified for partial power-down applications using I .
OFF
The I circuitry disables the output, preventing the damaging backflow current through
OFF
the device when it is powered down.
Schmitt trigger inputs make the circuit tolerant to slower input rise and fall times across
the entire V range.
CC
2. Features and benefits
Wide supply voltage range from 2.3 V to 3.6 V
High noise immunity
ESD protection:
HBM JESD22-A114F Class 3A exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101E exceeds 1000 V
Low static power consumption; I = 1.5 A (maximum)
CC
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of V
CC
I circuitry provides partial power-down mode operation
OFF
Multiple package options
Specified from 40 Cto+85 C and 40 Cto+125 C