X-On Electronics has gained recognition as a prominent supplier of BAS116T across the USA, India, Europe, Australia, and various other global locations. BAS116T are a product manufactured by NXP. We provide cost-effective solutions for BAS116T, ensuring timely deliveries around the world.

BAS116T NXP

BAS116T electronic component of NXP
BAS116T NXP
BAS116T Unclassified
BAS116T

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See Product Specifications
Part No. BAS116T
Manufacturer: NXP
Category: Unclassified
Description: DIODE, SWITCHING, SC75
Datasheet: BAS116T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.0578 ea
Line Total: USD 0.06 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 06 May to Mon. 12 May
MOQ : 1
Multiples : 1
1 : USD 0.0578
10 : USD 0.0549
25 : USD 0.0439
100 : USD 0.0388
250 : USD 0.0373
500 : USD 0.0366

   
Manufacturer
Product Category
Diode Configuration
Repetitive Reverse Voltage Vrrm Max
Forward Current Ifav
Forward Voltage Vf Max
Reverse Recovery Time Trr Max
Forward Surge Current Ifsm Max
Operating Temperature Max
Diode Case Style
No Of Pins
Packaging
Svhc
Diode Type
Msl
Operating Temperature Min
Operating Temperature Range
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BAS116T from our NXP manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAS116T and other electronic components in the NXP manufacturer and beyond.

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BAS116T Single low leakage current switching diode Rev. 2 9 July 2012 Product data sheet 1. Product profile 1.1 General description Single low leakage current switching diode, encapsulated in an ultra small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits High switching speed: t =0.8 s Low capacitance: C =2pF rr d Low leakage current: 3 pA Reverse voltage: V 75 V R Repetitive peak reverse voltage: Ultra small SMD plastic package V 85 V RRM AEC-Q101 qualified 1.3 Applications Low leakage current applications Voltage clamping General-purpose switching Reverse polarity protection 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit 1 I forward current -- 215 mA F I reverse current V =75V - - 5 nA R R V reverse voltage - - 75 V R 2 t reverse recovery time -- 3 s rr 1 Pulse test: t 300 s 0.02. p 2 When switched from I = 10 mA to I =10mA R = 100 measured at I =1mA. F R L R 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 anode 3 3 2 not connected 12 3 cathode 006aaa764 12 SOT416BAS116T NXP Semiconductors Single low leakage current switching diode 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BAS116T SC-75 plastic surface-mounted package 3 leads SOT416 4. Marking Table 4. Marking codes Type number Marking code BAS116T ZY 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak reverse -85 V RRM voltage V reverse voltage - 75 V R 1 I forward current -215 mA F I repetitive peak forward -500 mA FRM current 2 I non-repetitive peak square wave FSM forward current t =1 s-4A p t =1ms - 1 A p t =1s - 0.5 A p 3 P total power dissipation T 25 C -150 mW tot amb T junction temperature - 150 C j T ambient temperature 55 +150 C amb T storage temperature 65 +150 C stg 1 Pulse test: t 300 s 0.02. p 2 T =25 C before surge. j 3 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. BAS116T All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 9 July 2012 2 of 10

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NXP SEMI
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