Product Information

BAT54T

BAT54T electronic component of NXP

Datasheet
Schottky Diodes & Rectifiers 0.2A,30V,Surf Mt SCHOTTKY Barr DIODE
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1184 ea
Line Total: USD 0.12

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

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BAT54T
NXP

1 : USD 0.1184
25 : USD 0.104
100 : USD 0.0725
250 : USD 0.0567
500 : USD 0.0454

Read More Specifications

     
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Product Category
RoHS - XON
Icon ROHS
Mounting Style
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Additional Infomation About Product

BAT54T Single Schottky barrier diode Rev. 01 14 December 2009 Product data sheet 1. Product profile 1.1 General description Single planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOT416 (SC-75) ultra small Surface-Mounted Device (SMD) plastic package. 1.2 Features Low forward voltage: max. 400 mV Low capacitance: max. 10 pF Ultra small SMD plastic package AEC-Q101 qualified 1.3 Applications Ultra high-speed switching Voltage clamping Protection circuits Blocking diode 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I forward current - - 200 mA F V reverse voltage - - 30 V R 1 V forward voltage I =10mA --400 mV F F 1 Pulse test: t 300 s 0.02. pNXP Semiconductors BAT54T Single Schottky barrier diode 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 anode 3 3 2 not connected 2 3 cathode 1 n.c. 006aaa436 12 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BAT54T SC-75 plastic surface-mounted package 3 leads SOT416 4. Marking Table 4. Marking codes Type number Marking code BAT54T ZW 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage - 30 V R I forward current - 200 mA F I repetitive peak forward t 1s 0.5 - 300 mA FRM p current I non-repetitive peak square wave FSM forward current t = 100 s-4A p t =1ms - 2 A p t =10ms - 1 A p 1 P total power dissipation T 25 C -150 mW tot amb T junction temperature - 150 C j T ambient temperature 55 +150 C amb T storage temperature 65 +150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. BAT54T 1 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 14 December 2009 2 of 9

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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