BAV23@215 NXP

BAV23 series Dual high-voltage switching diodes Rev. 07 19 March 2010 Product data sheet 1. Product profile 1.1 General description Dual high-voltage switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package Configuration Nexperia JEDEC BAV23A SOT23 TO-236AB dual common anode BAV23C SOT23 TO-236AB dual common cathode BAV23S SOT23 TO-236AB dual series BAV23 SOT143B - dual isolated 1.2 Features and benefits High switching speed: t 50 ns Low capacitance: C 2pF rr d Low leakage current Small SMD plastic package Repetitive peak reverse voltage: V 250 V RRM 1.3 Applications High-speed switching at high voltage High-voltage general-purpose switching 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode I reverse current V = 200 V - - 100 nA R R V reverse voltage - - 200 V R 1 t reverse recovery time -- 50 ns rr 1 When switched from I = 10 mA to I =10mA R = 100 measured at I =1mA. F R L RBAV23 series Nexperia Dual high-voltage switching diodes 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol BAV23A 1 cathode (diode 1) 3 3 2 cathode (diode 2) 3 common anode 12 12 006aab099 BAV23C 1 anode (diode 1) 3 3 2 anode (diode 2) 3 common cathode 12 12 006aab034 BAV23S 1 anode (diode 1) 3 3 2 cathode (diode 2) 3 cathode (diode 1), anode (diode 2) 12 12 006aaa763 BAV23 1 cathode (diode 1) 4 3 43 2 cathode (diode 2) 3 anode (diode 2) 4 anode (diode 1) 1 2 12 006aab100 BAV23 SER 7 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 07 19 March 2010 2 of 13