X-On Electronics has gained recognition as a prominent supplier of BAV99/8 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. BAV99/8 Diodes - General Purpose, Power, Switching are a product manufactured by NXP. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

BAV99/8 NXP

BAV99/8 electronic component of NXP
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See Product Specifications
Part No.BAV99/8
Manufacturer: NXP
Category: Diodes - General Purpose, Power, Switching
Description: DIODE, DUAL, 215MA, 100V, SOT-23
Datasheet: BAV99/8 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2996 ea
Line Total: USD 0.3

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 12 Jul to Thu. 18 Jul
MOQ : 1
Multiples : 1
1 : USD 0.2996
10 : USD 0.2021
100 : USD 0.0845
1000 : USD 0.0572
3000 : USD 0.0448
9000 : USD 0.039

   
Manufacturer
Product Category
Packaging
Diode Configuration
Repetitive Reverse Voltage Vrrm Max
Forward Current Ifav
Forward Voltage Vf Max
Reverse Recovery Time Trr Max
Forward Surge Current Ifsm Max
Operating Temperature Max
Diode Case Style
No Of Pins
Svhc
Diode Type
Msl
Operating Temperature Min
Operating Temperature Range
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We are delighted to provide the BAV99/8 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAV99/8 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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BAV99/8 High-speed switching diode Rev. 01 30 March 2010 Product data sheet 1. Product profile 1.1 General description High-speed switching diode in dual series configuration, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits High switching speed: t 4ns Low capacitance: C 1.5 pF rr d Low leakage current Reverse voltage: V 100 V R Small SMD plastic package AEC-Q101 qualified 1.3 Applications High-speed switching Reverse polarity protection General-purpose switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode I reverse current V =80V - - 0.5 A R R V reverse voltage - - 100 V R 1 t reverse recovery time -- 4 ns rr 1 When switched from I =10mA to I =10 mA R = 100 measured at I =1 mA. F R L R 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 anode (diode 1) 3 3 2 cathode (diode 2) 3 cathode (diode 1), anode (diode 2) 12 12 006aaa763 BAV99/8 NXP Semiconductors High-speed switching diode 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BAV99/8 - plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code BAV99/8 MF* 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode V repetitive peak reverse -100 V RRM voltage V reverse voltage - 100 V R 1 I forward current -215 mA F 2 -125 mA I repetitive peak forward -500 mA FRM current 3 I non-repetitive peak square wave FSM forward current t =1 s- 4 A p t =1ms - 1 A p t =1s - 0.5 A p 1 4 P total power dissipation T 25 C -250 mW tot amb Per device T junction temperature - 150 C j T ambient temperature 65 +150 C amb T storage temperature 65 +150 C stg 1 Single diode loaded. 2 Double diode loaded. 3 T =25 C prior to surge. j 4 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. BAV99 8 1 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 30 March 2010 2 of 11

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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