BT138X-800 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BT138X series Triacs Product specification July 2001NXP Semiconductors Product specification Triacs BT138X series GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated triacs in a full pack plastic SYMBOL PARAMETER MAX. MAX. UNIT envelope, intended for use in applications requiring high bidirectional BT138X- 600 800 transient and blocking voltage capability BT138X- 600F 800F and high thermal cycling performance. Typical applications include motor V Repetitive peak off-state 600 800 V DRM control, industrial and domestic lighting, voltages heating and static switching. I RMS on-state current 12 12 A T(RMS) I Non-repetitive peak on-state 95 95 A TSM current PINNING - SOT186A PIN CONFIGURATION SYMBOL PIN DESCRIPTION case 1 main terminal 1 T2 T1 2 main terminal 2 3 gate G 12 3 case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -600 -800 1 V Repetitive peak off-state - 600 800 V DRM voltages I RMS on-state current full sine wave T 56 C - 12 A T(RMS) hs I Non-repetitive peak full sine wave T = 25 C prior to TSM j on-state current surge t = 20 ms - 95 A t = 16.7 ms - 105 A 2 2 2 ItI t for fusing t = 10 ms - 45 A s dI /dt Repetitive rate of rise of I = 20 A I = 0.2 A T TM G on-state current after dI /dt = 0.2 A/s G triggering T2+ G+ - 50 A/s T2+ G- - 50 A/s T2- G- - 50 A/s T2- G+ - 10 A/s I Peak gate current - 2 A GM V Peak gate voltage - 5 V GM P Peak gate power - 5 W GM P Average gate power over any 20 ms period - 0.5 W G(AV) T Storage temperature -40 150 C stg T Operating junction - 125 C j temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s. July 2001 1 Rev 1.400