BT148-600R,127 NXP

BT148-600R SCR 13 March 2014 Product data sheet 1. General description Planar passivated SCR with sensitive gate in a SIP3 (SOT82) plastic package intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits Sensitive gate Planar passivated for voltage ruggedness and reliability Direct triggering from low power drivers and logic ICs 3. Applications Adapters Battery powered applications Industrial automation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- 1 - - 600 V DRM state voltage V repetitive peak reverse - - 600 V RRM voltage I non-repetitive peak on- half sine wave T = 25 C - - 35 A TSM j(init) state current t = 10 ms Fig. 4 Fig. 5 p I RMS on-state current half sine wave T 113 C Fig. 2 - - 4 A T(RMS) mb Fig. 3 Static characteristics I gate trigger current V = 12 V I = 0.1 A T = 25 C Fig. 7 - 15 200 A GT D T j 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/s. Scan or click this QR code to view the latest information for this product TO-220ABNXP Semiconductors BT148-600R SCR 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode A K G 2 A anode sym037 3 G gate mb A mounting base connected to anode 1 2 3 SIP3 (SOT82) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT148-600R SIP3 plastic single-ended package 3 leads (in-line) SOT82 BT148-600R All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 13 March 2014 2 / 13