BTA208X-1000C0,127 NXP

BTA208X-1000C0 3Q Hi-Com Triac 19 September 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT186Afull pac plastic package. This triac is intended for use in motor control circuits where very high blocking voltage, high static and dynamic dV/dt as well as high dIcom/dt can occur. Thisseries C0 triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Features and benefits 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt Isolated mounting base package Optimized for highest noise immunity Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only Very high voltage capability 3. Applications Compressor starting control circuits General purpose motor controls Reversing induction motor controls e.g. vertical axis washing machines 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 1000 V DRM state voltage I RMS on-state current full sine wave T 73 C Fig. 1 - - 8 A T(RMS) h Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 65 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 71 A j(init) t = 16.7 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ 5 11 35 mA GT D T T = 25 C Fig. 7 jWeEn Semiconductors BTA208X-1000C0 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2+ G- 5 14 35 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- 5 25 35 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - 20 50 mA H D j V on-state voltage I = 10 A T = 25 C Fig. 10 - 1.3 1.65 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 670 V T = 125 C (V = 67% 1500 4000 - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 125 C I = 8 A 12 32 - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s (snubberless com condition) gate open circuit Fig. 12 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb n.c. mounting base isolated 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA208X-1000C0 TO-220F plastic single-ended package isolated heatsink mounted 1 SOT186A mounting hole 3-lead TO-220full pac BTA208X-1000C0 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 19 September 2018 2 / 13