BTA416Y-800C,127 NXP

BTA416Y-800C 3Q Hi-Com Triac 12 September 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally insulated plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. Thisseries triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber. This device has high T operating capability and j an internally isolated mounting base. 2. Features and benefits 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt High surge capability High T j(max) Isolated mounting base with 2500 V (RMS) isolation Less sensitive gate for high noise immunity Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only 3. Applications Electronic thermostats (heating and cooling) High power motor controls Rectifier-fed DC inductive loads e.g. DC motors and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 800 V DRM state voltage I RMS on-state current full sine wave T 108 C Fig. 1 - - 16 A T(RMS) mb Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 160 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 176 A j(init) t = 16.7 ms p T junction temperature - - 150 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ 2 - 35 mA GT D T T = 25 C Fig. 7 jWeEn Semiconductors BTA416Y-800C 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2+ G- 2 - 35 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- 2 - 35 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 35 mA H D j V on-state voltage I = 20 A T = 25 C Fig. 10 - 1.2 1.5 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 125 C (V = 67% 500 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit V = 536 V T = 150 C (V = 67% 300 - - V/s DM j DM of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 125 C I = 16 A 10 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s (without snubber com condition) gate open circuit V = 400 V T = 150 C I = 16 A 4 - - A/ms D j T(RMS) dV /dt = 20 V/s (without snubber com condition) gate open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb T2 T1 2 T2 main terminal 2 G sym051 3 G gate mb n.c. mounting base isolated 1 2 3 TO-220AB (SOT78D) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA416Y-800C TO-220AB plastic single-ended package isolated heatsink mounted 1 SOT78D mounting hole 3-lead TO-220 BTA416Y-800C All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 12 September 2018 2 / 13